University of Minnesota
Institute of Technology
myU OneStop

Electrical and Computer Engineering

MRAM: Magneto-resistive Random Access Memory

Romney R. Katti, Ph.D.
Honeywell International, Inc.


MRAM (Magneto-resistive Random Access Memory) technology is a breakthrough technology that has progressed substantially over the years through research and development efforts into production. MRAM has advanced from being a topic of fundamental science, physics, materials, and research; through applied research, engineering, and development stages; and now to being a standard non-volatile memory product including for space and strategic applications. MRAM uses magnetic spin-dependent tunneling which is a spin-electronic, or spintronic, effect; and has many desirable attributes as a memory product and as a non-volatile memory. Since the advancement of a technology from research and development status to production readiness constitutes a significant technological accomplishment and achievement, this presentation will review and discuss MRAM technology and fundamentals from engineering, product, and applications perspectives.


Romney Katti earned his B.S. (with Honors, in Engineering and Applied Science), M.S. (Electrical Engineering), and Ph.D. (Electrical and Computer Engineering) degrees, respectively, from the California Institute of Technology (Caltech), Stanford University, and Carnegie Mellon. Dr. Katti has worked closely and exten