University of Minnesota
Institute of Technology
http://www.it.umn.edu
612-624-2006
myU OneStop



Philip Cohen 2013

Philip I. Cohen
Professor

  

Area of expertise: Microelectronics materials and structures

Education
Ph.D., Physics, 1975, University of Wisconsin, Madison, WI, United States
B.A., Physics, 1969, Johns Hopkins University, Baltimore, MD, United States

Contact information
Office: 5-131 Keller Hall
Telephone: (612) 625-5517
E-mail: picohen (at) umn.edu
Personal Web Site: http://www.ece.umn.edu/~cohen/

Synopsis
We can now grow epitaxial films with composition control at the atomic level. Using the technique of molecular beam epitaxy, we are growing artificially structured materials to develop new device concepts and discover new materials phenomena. To do this, we monitor the epitaxial growth of semiconductor and metal films with in situ electron diffraction. Careful choice of growth procedures and parameters enables us to combine previously incompatible materials.

Once we understand the key ingredients — the role of surface structure and the kinetics of the growth process — we should be able to build semiconductors with engineered band structures for ultra-high-speed devices, as well as construct magnetic materials with BH loops and crystalline anisotropies tailored to specific device requirements. This new field is growing rapidly and is already considered state-of-the-art for the fabrication of new devices.

Selected publications
Held, R., G. Nowak, A. M. Dabiran, B. Ishaug, A. Parkhomovsky, P. I. Cohen, I. Grzegory, and S. Porowski. "Structure and Composition of GaN (0001) A and B Surfaces". Journal of Applied Physics, (1999).

Parkhomovsky, A., B. Ishaug, A. M. Dabiran, and P. I. Cohen. "Growth of Hf and HfN on GaN by Molecular Beam Epitaxy". Jounal of Vacuum Science Technology, (1999).

Dabiran, A. M., S. M. Seutter, S. Stoyanov, M. C. Bartelt, J. W. Evans, and P. I. Cohen. "Step Edge Barriers Versus Step Edge Relaxation in GaAs:Sn MBE". Surface Science, (1999).