Area of expertise: Devices and fabrication technologies.
Ph.D., EE, 1989, University of Illinois, Chicago, IL, United States
M.S., EE, 1982, Purdue University, West Lafayette, IN, United States
B.S., EE, 1981, Purdue University, West Lafayette, IN, United States
Office: 6-125 Keller Hall
Telephone: (612) 624-4170
E-mail: higman (at) umn.edu
My research interests are in the areas of electron device fabrication, with a special emphasis on the use of scanning tunneling microscope (STM) as a lithographic tool, and high-field transport in semiconductors, with recent emphasis on hot carrier injection into insulating layers and its effect upon the reliability of these insulators.
Higman, Ted K., Jihong Chen, M. S. Hagedorn, F. Williamson. "Real-space Transfer by Hot Electron Resonant Tunneling". Superlattices and Microstructures, ().
Higman, Ted K., R. T. Fayfield, M. S. Hagedorn, K. H. Lee, S. A. Campbell, J. N. Baillargeron, and K. Y. Cheng. "Low Temperature Nitridation of Silicon by Direct Ammonia Nitridation in a Molecular Beam Epitaxy Reactor”" Journal of Vacuum Science and Technology, B11 (1993): 992.
Lyding, J., R. Brockenborough, P. Faye, J. Tucker, K. Hess, and T. Higman. "Scanning Tunneling Microscope Based Nanolithography for Electron Device Fabrication". SPIE Publications.