Research: Emile

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Reduced Dielectric constant Design Methods in Semiconductors

Graduate Researcher: Emile Davies-Venn

     The prevalence of integrated circuits for compact system design requires novel design approaches. High dielectric constant materials in high frequency integrated microelectronics circuits (GHz) has and continues to limit the efficiency of structures that include antennae and lumped element interconnects.

     This research examines methods of obtaining the low dielectric index material required for improving such structure using the high index material used in most integrated circuits. Novel substrate configurations are researched that combine low and high dielectric material. A variety of planar geometries are studied and performance metrics are being determined. Preliminary results show certain configurations can result in index reduction as low as 20% of the original material index. 

 

2/2003

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