Publications

2007

  • "Device modeling of light-emitting ambipolar organic semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, J. Appl. Phys. 101, 084503 (2007).
  • "Recombination mechanism dependence of transport and light emission of ambipolar long-channel CNTFETs", C.-T. Hsieh, D.S. Citrin, and P.P. Ruden, Appl. Phys. Lett. 90, 012118 (2007).
  • "Electrical characterization of metal/pentacene contacts", L. Diao, C.D. Frisbie, D.D. Schroepfer, and P.P. Ruden, J. Appl. Phys. 101, 014510 (2007).
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2006

  • "Analytic device model for light-emitting ambipolar organic semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, Appl. Phys. Lett. 89, 233519 (2006).
  • "Electron transport in semiconducting chiral carbon nanotubes", M.Z. Kauser, and P.P. Ruden, Appl. Phys. Lett. 89, 162104 (2006).
  • "Effect of hydrostatic pressure on the current-voltage characteristics of GaN/AlGaN/GaN heterostructure devices", Y. Liu, M.Z. Kauser, D.D. Schroepfer, P.P. Ruden, J. Xie, Y.T. Moon, N. Onojima, H. Morkoc, K.-A. Son, and M.I. Nathan, J. Appl. Phys. 99, 113706 (2006).
  • "Electron Transport in Semiconducting Chiral CNTs", M.Z. Kauser, A. Verma, and P.P. Ruden, Mater. Res. Soc. Symp. Proc. 922E, Warrendale, PA (2006), 0922-U07-50.
  • "Effect of hydrostatic pressure on the dc characteristics of AlGaN/GaN heterojunction field-effect transistors", Y. Liu, P.P. Ruden, J. Xie, H. Morkoc, and K.-A. Son, Appl. Phys. Lett. 88, 013505 (2006).
  • "Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN", Y. Liu, M.Z. Kauser, P.P. Ruden, Z. Hassan, Y.C. Lee, S.S. Ng, and F.K. Yam, Appl. Phys. Lett. 88, 022109 (2006).
  • "AlGaN metal-semiconductor-metal structure for pressure sensing applications", Z. Hassan, Y.C. Lee, S.S. Ng, F.K. Yam, Y.Liu, Z. Rang, M.Z. Kauser, P.P. Ruden, and M.I. Nathan, Phys. Stat. Sol. C 3, 2287 (2006).
  • "Low and high field transport studies for semiconducting carbon nanotubes", M.Z. Kauser, A. Verma, and P.P. Ruden, Physica E 34, 666 (2006).
  • "Film and contact resistance in pentacene thin-film transistors: Dependence on film thickness, electrode geometry, and correlation with hole mobility", P.V. Pesavento, K.P. Puntambekar, C.D. Frisbie, J.C. McKeen, and P.P. Ruden, J. Appl. Phys. 99, 094504 (2006).
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2005

  • "Magnetism in n-type GaMnN grown by molecular beam epitaxy", J.E. Van Nostrand, J.D. Albrecht, B. Claflin, Y. Liu. M.I. Nathan, and P.P. Ruden, Phys. Stat. Sol. B 232, 3182 (2005).
  • "Effects of radial breathing mode phonons on charge transport in semiconducting zigzag carbon nanotubes", A. Verma, M.Z. Kauser, and P.P. Ruden, Appl. Phys. Lett. 87, 123101 (2005).
  • "Ensemble Monte Carlo transport simulations for semiconducting carbon nanotubes", A. Verma, M.Z. Kauser, and P.P. Ruden, J. Appl. Phys. 97, 114319 (2005).
  • "Modeling of Spin Injection and Spin Transport Properties in Organic and Inorganic Semiconductors", P.P. Ruden, J.D. Albrecht, and D.L. Smith, Organic Thin-Film Electronics, edited by A.C. Arias, N. Tessler, L. Burgi, and J.A. Emerson (Mater. Res. Soc. Symp. Proc. 871E, Warrendale, PA , 2005), I1.6.1.
  • "Comparison of spin injection and transport in organic and inorganic semiconductors", P.P. Ruden, D.L. Smith, and J.D. Albrecht, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 1377 (2005).
  • "Ensemble Monte Carlo Transport Simulations for Semiconducting Carbon Nano-Tubes", A. Verma, M.Z. Kauser, B.W. Lee, K.F. Brennan, and P.P. Ruden, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 1049 (2005).
  • "Effect of wet etching on the magnetic properties on n-type GaMnN layers", Y. Liu, M.I. Nathan, P.P. Ruden, J.E. Van Nostrand, B. Claflin, and J.D. Albrecht, CP772, Physics of Semiconductors: 27th International Conference on the Physics of Semiconductors, J. Menendez and C.G. Van de Walle, eds., American Institute of Physics, p. 359 (2005).
  • "Electrical and magnetic characteristics of MBE grown GaMnN", J.D. Albrecht, J.E. van Nostrand, B. Claflin, Y. Liu, M.I. Nathan, and P.P. Ruden, Journal of Superconductivity: Incorporating Novel Magnetism, 18, 69 (2005).
  • "Hydrostatic pressure dependence of charge carrier transport in single-crystal rubrene devices", Z. Rang, M.I. Nathan, P.P. Ruden, V. Podzorov, M.E. Gershenson, C.R. Newman, and C.D. Frisbie, Appl. Phys. Lett. 86, 123501 (2005).
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2004

  • "Hydrostatic pressure dependence of organic thin-film transistor current vs. voltage characteristics", Z. Rang, M.I. Nathan, P.P. Ruden, R. Chesterfield, and C.D. Frisbie, Appl. Phys. Lett., 85, 5760 (2004).
  • "Pentacene Organic Field-Effect Transistor on metal substrates with spin-coated smoothing layer", Y. Jin, Z. Rang, M.I. Nathan, P.P. Ruden, C.R. Newman, and C.D. Frisbie, Appl. Phys. Lett. 85, 4406 (2004).
  • "Model for spin injection into conjugated organic semiconductors", P.P. Ruden and D.L. Smith, G3.8, Mat. Res. Soc. Symp. Proc. (2004).
  • "Theory of spin injection into conjugated organic semiconductors", P.P. Ruden and D.L. Smith, J. Appl. Phys. 95, 4898 (2004).
  • "Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN", Y. Liu, M.Z. Kauser, M.I. Nathan, P.P. Ruden, S. Dogan, H. Morkoc, S.S. Park, and K.Y. Lee, Appl. Phys. Lett. 84, 2112 (2004).
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2003

  • "Investigation of bottom-contact organic field effect transistors by two-dimensional device modeling", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, J. Appl. Phys. 93, 4017 (2003).
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2002

  • "Hole scattering near the valence band edge in wurtzite GaN", J.D. Albrecht, P.P. Ruden, and T.L. Reinecke, J. Appl. Phys. 92, 3803 (2002).
  • "Two-dimensional modeling of organic field effect transistors", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat. Res. Soc. Symp. Proc. 725, 137 (2002).
  • "Effects of hydrostatic and uniaxial stress on the conductivity of p-type GaN epitaxial layer", Y. Liu, M.Z. Kauser, M.I. Nathan, P.P. Ruden, A.M. Dabiran, B. Hertog, and P.P. Chow, Appl. Phys. Lett. 81, 3398 (2002).
  • "Modeling of channel formation in organic field effect transistors", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat. Res. Soc. Symp. Proc. 708, 237 (2002).
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2001

  • "Monte Carlo simulations of electron transport in III-Nitride wurtzite phase materials system: binaries and ternaries", M. Farahmand, C. Garetto, E. Bellotti, K.F. Brennan, M. Goano, E. Ghillino, G. Ghione, J.D. Albrecht and P.P. Ruden, IEEE Trans. Electron Devices 48, 535 (2001).
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2000

  • "AlGaN/GaN heterostructure field-effect transistor model including thermal effects", J.D. Albrecht, P.P. Ruden, S.C. Binari, and M.G. Ancona, IEEE Trans. Electron Devices 47, 2031 (2000).
  • Invited paper: "Monte Carlo simulation of non-cubic symmetry semiconducting materials and devices", K.F. Brennan, E. Bellotti, M. Farahmand, H.-E. Nilsson, P.P. Ruden, and Y. Zhang IEEE Trans. Electron Devices 47, 1882 (2000).
  • "Modeling of Band-to-Band Tunneling Transitions During Drift in Monte Carlo Transport Simulations", P.P. Ruden, E. Bellotti, H.-E. Nilsson, and K.F. Brennan, J. Appl. Phys. 88, 1488 (2000).
  • "New materials-theory-based model for output characteristics of AlGaN/GaN Heterostructure Field Effect Transistors", J.D. Albrecht, P.P. Ruden, and M.G. Ancona, MRS Internet J. Nitride Semicond. Res., F99W11.15 (2000).
  • "AlGaN/GaN heterojunction bipolar transistor structures - design considerations", Y. Zhang, C. Cai, and P.P. Ruden, J. Appl. Phys. 88, 1067 (2000).
  • "Materials-theory-based modeling of wide band gap semiconductors: from basic properties to devices", K.F. Brennan, E. Bellotti, M. Farahmand, J. Haralson II, P.P. Ruden, J.D. Albrecht, and A. Sutandi, Solid-State Electron. 44, 195 (2000).
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1999

  • "High Field Electron Transport Properties of Bulk ZnO", J.D. Albrecht, P.P. Ruden, S. Limijumnong, W.R.L. Lambrecht, and K.F. Brennan, J. Appl. Phys. 86, 6864 (1999).
  • "1.3 micron Polarization Insensitive Optical Amplifier Structure Based on Coupled Quantum Wells", Y. Zhang and P.P. Ruden, IEEE J. Quantum Electron. QE-35, 1509 (1999).
  • "Current-Voltage Characteristics of Ungated AlGaN/GaN Heterostructures", J.D. Albrecht, P.P. Ruden, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, Mat. Res. Soc. Symp. Proc. 572, 489 (1999).
  • "Ensemble Monte Carlo Calculation of Hole Transport in 3C-SiC", E. Bellotti, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, J. Appl. Phys. 85, 3211 (1999).
  • "Extrinsic Performance Limitations of AlGaN/GaN Heterostructure Field Effect Transistors", P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C. Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E. Wickenden, MRS Internet Journal of Semicond. Res. 4S1 G6.35 (1999).
  • "Monte Carlo Simulation of Hall Effect in n-Type GaN", J.D. Albrecht, P.P. Ruden, and K.F. Brennan, MRS Internet Journal of Semicond. Res. 4S1, G6.6 (1999).
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1998

  • "Electron Transport Characteristics of GaN for High Temperature Device Modeling", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys. 83, 4777 (1998).
  • "Monte Carlo study of electron initiated impact ionization in bulk zincblende and wurtzite phase ZnS", E. Bellotti, K. F. Brennan, R. Wang, and P. P. Ruden, J. Appl. Phys. 83, 4765 (1998).
  • "Monte Carlo Calculation of High- and Low-Field AlGaN Electron Transport Characteristics", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, E. Belotti, and K.F. Brennan, Mat. Res. Soc. Symp. Proc. 482, 815 (1998).
  • "Monte Carlo Calculation of Electron Transport in Bulk AlN", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J. Appl. Phys. 83, 1446 (1998).
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1997

  • "Theory of Hole Initiated Impact Ionization in Bulk Zincblende and Wurtzite GaN", I.H. Oguzman, E. Bellotti, K.F. Brennan, J. Kolnik, R. Wang, and P.P. Ruden, J. Appl. Phys. 81, 7827 (1997).
  • "Calculation of the Electron Initiated Impact Ionization Transition Rate in Cubic and Hexagonal Phase ZnS", E. Bellotti, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 82, 2961 (1997).
  • "Electronic Structure Model for n-type and p-type Silicon Quantum Dots", T.-N. Fang and P.P. Ruden, Superlattices and Microstructures 22, 589 (1997).
  • "Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy", J.M. Van Hove, R. Hickman, J.J. Klaassen, P.P. Chow, and P.P. Ruden, Appl. Phys. Lett. 70, 2282 (1997).
  • "Shallow Impurity States in Wurtzite and Zincblende Structure GaN", R. Wang, P.P. Ruden, J. Kolnik, I.H. Oguzman, and K.F. Brennan, Mat. Res. Soc. Symp. Proc. 445, 935 (1997).
  • "Monte Carlo Calculation of Electron Initiated Impact Ionization in Bulk Zincblende and Wurtzite GaN", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 81, 726 (1997).
  • "Dielectric Properties of Wurtzite and Zincblende Structure Gallium Nitride", R. Wang, P.P. Ruden, J. Kolnik, I. Oguzman, and K.F. Brennan, J. Phys. Chem. Sol. 58, 913 (1997).
  • "Linear In-Plane Uniaxial Stress Effects on the Device Characteristics of AlGaAs/GaAs Modulation Doped Field Effect Transistors", A.K. Fung, L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and H. Shtrikman, J. Appl. Phys. 81, 502 (1997).
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1996

  • "Theoretical Prediction of Zincblende GaN Avalanche Photodiode Performance Based on Numerically Calculated Electron and Hole Impact Ionization Ratio", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, Mat. Res. Soc. Symp. Proc. 423, 45 (1996).
  • "Hole Transport Properties of Bulk Zincblende and Wurtzite Phases of GaN Based on an Ensemble Monte Carlo Calculation Including a Full Zone Band Structure", I.H. Oguzman, J. Kolnik, K.F. Brennan, R. Wang, T.-N. Fang, and P.P. Ruden, J. Appl. Phys. 80, 4429 (1996).
  • "Calculation of the Wavevector Dependent Interband Impact Ionization Transition Rate in Wurtzite and Zincblende Phases of Bulk GaN", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 79, 8838 (1996).
  • "Growth of (111)b-Oriented Resonant Tunneling Devices in a Gas Source Molecular Beam Epitaxy System", L. Cong, J.D. Albrecht, D. Cohen, P.P. Ruden, and M.I. Nathan, J. Vac. Sci. Technol. A 14, 924 (1996).
  • "Resonant Tunneling in (001)- and (111)-Oriented III-V Double Barrier Heterostructures Under Transverse and Longitudinal External Stresses", J.D. Albrecht, L. Cong, M.I. Nathan, and P.P. Ruden, J. Appl. Phys. 79, 7763 (1996).
  • "Piezoelectric Effects in (001)- and (111)-Oriented Double Barrier Resonant Tunneling Devices", L. Cong, J.D. Albrecht, P.P. Ruden, M.I. Nathan, and D.L. Smith, J. Appl. Phys. 79, 7770 (1996).
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1995

  • "Independent Control of Electron Density and Spatial Electron Distribution of Wire Gate Quantum Wire", R. Yang and P.P. Ruden, Proceedings 1995 International Semiconductor Device Research Symposium, 369 (1995).
  • "Electron-Electron Interaction Induced Instability in Double Quantum Wire Structures", R. Wang and P.P. Ruden, Phys. Rev. B 52, 7826 (1995).
  • "Electron-Electron Interaction in Three-Dimensional Model Quantum Box", R. Yang and P.P. Ruden, J. Appl. Phys. 78, 1798 (1995).
  • "Electronic Transport Studies of Bulk Zincblende and Wurtzite Phases of GaN Based on an Ensemble Monte-Carlo Calculation Including a Full Zone Band Structure", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, P.P. Ruden, and Y. Wang, J. Appl. Phys. 78, 1033 (1995).
  • "Coulomb Effects Between Electrons in Quantum Box Structure", R. Yang, P.P. Ruden, and D.L. Smith, Phil. Mag. B 71, 359 (1995).
  • "Piezoelectric Effects in (001)-Oriented Double Barrier Resonant Tunneling Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 66, 1358 (1995).
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1994

  • "Piezoelectric Effects in Double Barrier Resonant Tunneling Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and D.L. Smith, Proceedings of the 22nd International Conference on the Physics of Semiconductors, L.D. Lockwood--editor, 1067, World Scientific: Singapore (1994).
  • "Optical Properties of AlGaAs/GaAs n-i-p-i Superlattices and Their Application in Asymmetric Cavity Spatial Light Modulators", M.K. Hibbs-Brenner, P.P. Ruden, J. Lehman, J.J. Liu, and R. Walterson, IEEE J. Quantum Electron. 30, 1227 (1994).
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1993

  • "Self-Consistent Calculation of the Structure of Semiconductor Quantum Wires: Semi-classical and Quantum Mechanical Approaches", Z. Wu and P.P. Ruden, J. Appl. Phys. 74, 6234 (1993).
  • "Self-Consistent Calculation of the Electronic Structure and Inter-Wire Interaction of Split Gate Double Quantum Wires", Z. Wu, R. Yang, and P.P. Ruden, Proceedings 1993 International Semiconductor Device Research Symposium 229 (1993).
  • "Coulomb Coupling Effects in Single Electron Quantum Box Structures", R. Yang, P.P. Ruden, and D.L. Smith, Proceedings 1993 International Semiconductor Device Research Symposium 329 (1993).
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1992

  • "Interband Optical Transitions in Doping Superlattices", J. Liu and P.P. Ruden, Superlattices and Microstructures 12, 63 (1992).
  • "Exchange Effect in Coupled One-Dimensional Electron Gas Systems", Z. Wu and P.P. Ruden, J. Appl. Phys. 71, 1318 (1992).
  • "Self-Consistent Subband Calculations of Hetero n-i-p-i Superlattices and the Effects of Valence Subband Mixing", J. Liu and P.P. Ruden, Superlattices and Microstructures 11, 415 (1992).
  • "0.7 Micron Gate Length Complementary Al(0.75)Ga(0.25)As/In(0.25)Ga(0.75)As/GaAs HIGFET Technology for High Speed/Low Power Digital Circuits", D.E. Grider, P.P. Ruden, J.C. Nohava, I.R. Mactaggart, J.J. Stronczer, and R.H. Tran, 1992 IEDM Technical Digest 331 (1992).
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1991

  • "Exchange Effects in Coupled Two-Dimensional Electron Gas Systems", P.P. Ruden and Z. Wu, Appl. Phys. Lett. 59, 2165 (1991).
  • "Coupled Quasi One-Dimensional Electron Systems", Z. Wu and P.P. Ruden, Proceedings 1991 International Semiconductor Device Research Symposium 105 (1991).
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