- "Mobility Anisotropy in Black Phosphorus MOSFETs With HfO₂ Gate Dielectrics",
Nazila Haratipour, Yue Liu, Ryan J Wu, Seon Namgung, P Paul Ruden, K Andre Mkhoyan, Sang-Hyun Oh, Steven J Koester,
IEEE Transactions on Electron Devices
99,
1-9 (2018).
- "Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors",
Tao He, Yanfei Wu, Gabriele D’Avino, Elliot Schmidt, Matthias Stolte, Jérôme Cornil, David Beljonne, P Paul Ruden, Frank Würthner, C Daniel Frisbie,
Nature communications
9 (1),
2141 (2018).
Back to Top
- "Magneto-optical effects in organic semiconductor devices",
Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden,
Magnetic Field Effects, World Scientific
(2017).
- "Temperature-dependent anisotropic charge-carrier mobility limited by ionized impurity scattering in thin-layer black phosphorus",
Yue Liu, P Paul Ruden,
Physical Review B
95 (16),
165446 (2017).
- "Theory of magnetoresistance of organic molecular tunnel junctions with nonmagnetic electrodes",
Sha Shi, Zuoti Xie, Feilong Liu, Darryl L Smith, C Daniel Frisbie, P Paul Ruden,
Physical Review B
95 (15),
155315 (2017).
Back to Top
- "Large Magnetoresistance at Room Temperature in Organic Molecular Tunnel Junctions with Nonmagnetic Electrodes",
Zuoti Xie, Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden, C Daniel Frisbie,
ACS nano
10 (9),
8571-8577 (2016).
- "Characterization of the Electric Double Layer Formation Dynamics of a Metal/Ionic Liquid/Metal Structure",
Elliot Schmidt, Sha Shi, P Paul Ruden, C Daniel Frisbie,
ACS applied materials & interfaces
8 (23),
14879-14884 (2016).
- "Mobility anisotropy in monolayer black phosphorus due to scattering by charged impurities",
Yue Liu, Tony Low, P Paul Ruden,
Physical Review B
93 (16),
165402 (2016).
Back to Top
- "Device model for graphene spin valves",
Feilong Liu, Yue Liu, Darryl L Smith, P Paul Ruden,
IEEE Transactions on Electron Devices
62 (10),
3426-3432 (2015).
- "Current–voltage characteristics of organic heterostructure devices with insulating spacer layers",
Sun Yin, Wanyi Nie, Aditya D Mohite, Avadh Saxena, Darryl L Smith, P Paul Ruden,
Organic Electronics
24,
26-29 (2015).
- "Interface Design Principles for High‐Performance Organic Semiconductor Devices",
Wanyi Nie, Gautam Gupta, Brian K Crone, Feilong Liu, Darryl L Smith, P Paul Ruden, Cheng-Yu Kuo, Hsinhan Tsai, Hsing-Lin Wang, Hao Li, Sergei Tretiak, Aditya D Mohite,
Advanced Science
2 (6),1500024 (2015).
- "Effects of disorder on spin injection and extraction for organic semiconductor spin-valves",
Sha Shi, Feilong Liu, Darryl L Smith, P Paul Ruden,
Journal of Applied Physics
117 (8),
085501 (2015).
Back to Top
- "Magnetoelectroluminescence of organic heterostructures: Analytical theory and spectrally resolved measurements",
Feilong Liu, Megan R Kelley, Scott A Crooker, Wanyi Nie, Aditya D Mohite, P Paul Ruden, Darryl L Smith,
Physical Review Bs
90 (23),
235314 (2014).
- "Scattering in graphene associated with charged out-of-plane impurities",
Yue Liu, Aditi Goswami, Feilong Liu, Darryl L Smith, P Paul Ruden,
Journal of Applied Physics
116 (23),
234301 (2014).
- "Charge Density Dependent Two‐Channel Conduction in Organic Electric Double Layer Transistors (EDLTs)",
Wei Xie, Feilong Liu, Sha Shi, P Paul Ruden, C Daniel Frisbie,
Advanced Materials
26 (16),
2527-2532 (2014).
- "Spectrally resolved hyperfine interactions between polaron and nuclear spins in organic light emitting diodes: Magneto-electroluminescence studies",
SA Crooker, F Liu, MR Kelley, NJD Martinez, W Nie, A Mohite, IH Nayyar, S Tretiak, DL Smith, PP Ruden,
Applied Physics Letters
105 (15),
161_1 (2014).
Back to Top
- "Coupling of channel conductance and gate-to-channel capacitance in electric double layer transistors",
Feilong Liu, Wei Xie, Sha Shi, C Daniel Frisbie, P Paul Ruden,
Applied Physics Letters
103 (19),
209_1 (2013).
- "Rashba-induced spin scattering at graphene edges",
Feilong Liu, Yue Liu, Jiaxi Hu, Darryl L Smith, P Paul Ruden,
Journal of Applied Physics
114 (9),
093708 (2013).
- "Modeling charge transport in quantum dot light emitting devices with NiO and ZnO transport layers and Si quantum dots",
Brijesh Kumar, Stephen A Campbell, P Paul Ruden,
Journal of Applied Physics
114 (4),
044507 (2013).
- "High-Mobility Transistors Based on Single Crystals of Isotopically Substituted Rubrene-d28",
Wei Xie, Kathryn A McGarry, Feilong Liu, Yanfei Wu, P Paul Ruden, Christopher J Douglas, C Daniel Frisbie,
The Journal of Physical Chemistry C
117 (22),
11522-11529 (2013).
- "Control of interface microscopic processes in organic bilayer structures and their effect on photovoltaic device performance",
Feilong Liu, Brian K Crone, P Paul Ruden, Darryl L Smith,
Journal of Applied Physics
113 (4),
044516 (2013).
- "Electron spin flip scattering in graphene due to substrate impurities",
Aditi Goswami, Yue Liu, Feilong Liu, P Paul Ruden, Darryl L Smith,
MRS Online Proceedings Library Archive
1505,(2013).
Back to Top
- "Electrostatic capacitance in single and double
layer organic diodes",
Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith,
Appl. Phys. Lett.
101 (2),
023501 (2012).
- "Device model for electronic processes at organic/organic interfaces",
Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith,
Journal of Applied Physics
111 (9), 094507 (2012).
- "Magneto-resistance of organic spin valves due to spin-polarized tunnel injection and extraction of charge carriers",
A Goswami, M Yunus, PP Ruden, DL Smith,
Journal of Applied Physics
111(3), 034505
- "Percolation model for the threshold voltage of field-effect transistors with nanocrystalline channels",
IP Steinke, PP Ruden,
Journal of Applied Physics
1448(2012).
- "Modeling of Exciplex Recombination in Organic Bilayer Structures",
Feilong Liu, P Paul Ruden, Ian H Campbell, Darryl L Smith,
MRS Online Proceedings Library Archive
111(3), 034505
Back to Top
- "Exciplex current mechanism for ambipolar bilayer organic
light
emitting diodes", Feilong Liu, P.P. Ruden, I.H. Campbell, and D.L.
Smith, Appl. Phys. Lett.
99,
123301 (2011).
- "Examination of Au, Cu, and Al contacts in organic
field-effect
transistors via displacement current measurement", Y. Liang, H.-C.
Chang, P.P. Ruden, and C.D. Frisbie, J. Appl. Phys. 110, 064514 (2011).
- "Charge carrier extraction dynamics for organic field
effect
transistor structures", H.-C. Chang, P.P. Ruden, Y. Liang, and C.D.
Frisbie, Appl. Phys.
Lett. 99,
073306 (2011).
- “Performance of a split-spectrum photovoltaic device
operating under time-varying spectral conditions,” E.R. Torrey, P.P.
Ruden, and P.I. Cohen, J.
Appl. Phys. 109,
074909 (2011).
- “Interfaces are critical,” P.P.
Ruden, News and Views,
Nature Materials 10,
8 (2011).
Back to Top
- “Spin-polarized charge carrier injection by tunneling from
ferromagnetic contacts into organic semiconductors,” M. Yunus, P.P.
Ruden, and D.L. Smith, Appl.
Phys. Lett. 97,
223304 (2010).
- “Transient charge carrier transport effects in organic
field
effect transistor channels,” H.-C. Chang P.P. Ruden, Y. Liang, and C.D.
Frisbie, Mater. Res.
Soc. Symp. Proc. 1270,
eds. V.R. Bommisetty, N.S. Sariciftci, K. Narayan, G. Rumbles, P.
Peumans, J. van de Lagemaat, G. Dennler, S.E. Shaheen, 1270-II01-08
(2010).
- “Carrier localization on surfaces of organic semiconductors
gated
with electrolytes,” Y. Xia, W. Xie, P.P. Ruden, and C.D. Frisbie, Phys. Rev. Lett. 105, 036802 (2010).
- “Transient effects controlling the charge carrier
population of organic
field effect transistor channels,” H.-C. Chang, P.P. Ruden, Y. Liang,
and C.D. Frisbie, J. of
Appl. Phys. 107,
104502 (2010).
- Book Chapter:
“Modeling spin injection and transport in organic semiconductor
structures,” P.P. Ruden and D.L. Smith, in Organic Spintronics,
ed.: Z.V. Vardeny, Taylor and Francis (2010).
Back to Top
- “Spin transport
and magneto-resistance in organic semiconductors,” M. Yunus, P.Pauden,
and D.L. Smith, Mater.
Res. Soc. Symp. Proc. 1154,
eds. N. Koch, E. Zojer, S-W. Hla, X. Zhu, 1154-B10-10 (2009).
- “Macroscopic modeling of spin injection and spin transport
in organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Synthetic Metals 160, 204 (2009).
- “Comparison of the mobility-carrier density relation in
polymer
and single-crystal organic transistors employing vacuum and liquid gate
dielectrics,” Xia, J. Ho, J. Lee, P.P. Ruden, and C.D. Frisbie, Advanced Materials 21, 2174 (2009).
- “Conducting channel formation
and annihilation in
organic field-effect structures,” Y. Liang, C.D. Frisbie, H.-C. Chang,
and P.P. Ruden, J.
Appl. Phys. 105,
024514 (2009).
Back to Top
- “Spin injection
effects on exciton formation in organic
semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, Appl. Phys. Lett. 93, 123312 (2008).
- “Spin-polarized tunneling through potential barriers at
ferromagnetic metal/semiconductor Schottky contacts,” D.L. Smith and
P.P. Ruden, Phys. Rev. B
78,
125202 (2008).
- “Ambipolar electrical spin injection and spin transport in
organic semiconductors,” M. Yunus, P.P. Ruden, and D.L. Smith, J. Appl. Phys. 103, 103714 (2008).
- “Quantum efficiency of ambipolar light-emitting polymer
field-effect transistors,” J. Zaumseil, C.R. McNeill, M. Bird, D.L.
Smith, P.P. Ruden, M. Roberts, M.J. McKiernan, R.H. Friend, and H.
Sirringhaus, J. Appl.
Phys. 103,
064517 (2008).
- “Current vs. voltage characteristics of GaN/AlGN/GaN double
heterostructures with varying AlGaN thickness and composition under
hydrostatic pressure,” I.P. Steinke, P.P. Ruden, X. Ni, H. Morkoc, and
K.-A. Son, J. Appl.
Phys. 103,
064502 (2008).
- "Hydrostatic
pressure effects on
poly(3-hexylthiophene) thin film transistors", D.D. Schroepfer, P.P.
Ruden, Y. Xia, C.D. Frisbie, and S.E. Shaheen, Appl. Phys.
Lett. 92, 013305 (2008).
Back to Top
- "Effects
of Chirality and Diameter on Electron
Transport Properties in Individual Semiconducting Carbon Nanotubes", M.
Zahed Kauser and P. Paul Ruden, Low-Dimensional Materials —
Synthesis, Assembly, Property Scaling, and Modeling, edited
by M.
Shim, M. Kuno, X-M. Lin, R. Pachter, S. Kumar (Mater. Res. Soc. Symp.
Proc. 1017E, Warrendale, PA, 2007), 1017-DD08-49.
- "Device
Model for Light-Emitting Field-Effect
Transistors with Organic Semiconductor Channel", P.Paul Ruden and
Darryl L. Smith, Organic Thin-Film Electronics — Materials,
Processes, and Applications, edited by A.C. Arias, J.D.
MacKenzie,
A. Salleo, N. Tessler (Mater. Res. Soc. Symp. Proc. 1003E
,
Warrendale, PA, 2007), 1003-O04-08.
- "Hydrostatic
Pressure Studies of GaN/AlGaN/GaN
Heterostructure Devices with Varying AlGaN Thickness and Composition",
Isaiah Steinke, M. Z. Kauser, P. Paul Ruden, Xianfeng Ni, Hadis Morkoc,
Kyung-ah Son, Semiconductor Defect Engineering—Materials,
Synthetic
Structures and Devices II, edited by S. Ashok, P. Kiesel, J.
Chevallier, T. Ogino (Mater. Res. Soc. Symp. Proc. 994,
Warrendale, PA, 2007), 0994-F11-19.
- "Effects
of chirality and diameter on the
transport properties of semiconducting carbon nanotubes",
M.Z. Kauser and P.P. Ruden, J. Appl. Phys. 102,
033712
(2007).
- "Device
modeling of light-emitting ambipolar
organic
semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, J.
Appl. Phys. 101, 084503 (2007).
- "Recombination
mechanism dependence of transport
and light
emission of ambipolar long-channel CNTFETs", C.-T. Hsieh, D.S. Citrin,
and P.P. Ruden, Appl. Phys. Lett. 90,
012118 (2007).
- "Electrical
characterization of metal/pentacene
contacts", L.
Diao, C.D. Frisbie, D.D. Schroepfer, and P.P. Ruden, J. Appl.
Phys. 101, 014510 (2007).
Back to Top
- "Analytic
device model for light-emitting
ambipolar organic
semiconductor field-effect transistors", D.L. Smith and P.P. Ruden, Appl.
Phys. Lett. 89, 233519 (2006).
- "Electron
transport in semiconducting chiral
carbon nanotubes",
M.Z. Kauser, and P.P. Ruden, Appl. Phys. Lett. 89,
162104 (2006).
- "Effect
of hydrostatic pressure on the
current-voltage
characteristics of GaN/AlGaN/GaN heterostructure devices", Y. Liu, M.Z.
Kauser, D.D. Schroepfer, P.P. Ruden, J. Xie, Y.T. Moon, N. Onojima, H.
Morkoc, K.-A. Son, and M.I. Nathan, J. Appl. Phys. 99,
113706 (2006).
- "Electron
Transport in Semiconducting Chiral
CNTs", M.Z. Kauser,
A. Verma, and P.P. Ruden, Mater. Res. Soc. Symp. Proc.
922E,
Warrendale, PA (2006), 0922-U07-50.
- "Effect
of hydrostatic pressure on the dc
characteristics of
AlGaN/GaN heterojunction field-effect transistors", Y. Liu, P.P. Ruden,
J. Xie, H. Morkoc, and K.-A. Son, Appl. Phys. Lett.
88,
013505 (2006).
- "Effect
of hydrostatic pressure on the barrier
height of Ni
Schottky contacts on n-AlGaN", Y. Liu, M.Z. Kauser, P.P. Ruden, Z.
Hassan, Y.C. Lee, S.S. Ng, and F.K. Yam, Appl. Phys. Lett.
88,
022109 (2006).
- "AlGaN
metal-semiconductor-metal structure for
pressure sensing
applications", Z. Hassan, Y.C. Lee, S.S. Ng, F.K. Yam, Y.Liu, Z. Rang,
M.Z. Kauser, P.P. Ruden, and M.I. Nathan, Phys. Stat. Sol. C
3,
2287 (2006).
- "Low
and high field transport studies for
semiconducting carbon
nanotubes", M.Z. Kauser, A. Verma, and P.P. Ruden, Physica E
34,
666 (2006).
- "Film
and contact resistance in pentacene
thin-film transistors:
Dependence on film thickness, electrode geometry, and correlation with
hole mobility", P.V. Pesavento, K.P. Puntambekar, C.D. Frisbie, J.C.
McKeen, and P.P. Ruden, J. Appl. Phys. 99,
094504
(2006).
Back to Top
- "Magnetism
in n-type GaMnN grown by molecular beam
epitaxy", J.E.
Van Nostrand, J.D. Albrecht, B. Claflin, Y. Liu. M.I. Nathan, and P.P.
Ruden, Phys. Stat. Sol. B 232,
3182 (2005).
- "Effects
of radial breathing mode phonons on
charge transport in
semiconducting zigzag carbon nanotubes", A. Verma, M.Z. Kauser, and
P.P. Ruden, Appl. Phys. Lett. 87,
123101 (2005).
- "Ensemble
Monte Carlo transport simulations for
semiconducting
carbon nanotubes", A. Verma, M.Z. Kauser, and P.P. Ruden, J.
Appl.
Phys. 97, 114319 (2005).
- "Modeling
of Spin Injection and Spin Transport
Properties in
Organic and Inorganic Semiconductors", P.P. Ruden, J.D. Albrecht, and
D.L. Smith, Organic Thin-Film Electronics, edited
by A.C.
Arias, N. Tessler, L. Burgi, and J.A. Emerson (Mater. Res.
Soc.
Symp. Proc. 871E, Warrendale, PA , 2005),
I1.6.1.
- "Comparison
of spin injection and transport in
organic and
inorganic semiconductors", P.P. Ruden, D.L. Smith, and J.D. Albrecht,
CP772, Physics of Semiconductors: 27th International
Conference on
the Physics of Semiconductors, J. Menendez and C.G. Van de
Walle,
eds., American Institute of Physics, p. 1377 (2005).
- "Ensemble
Monte Carlo Transport Simulations for
Semiconducting
Carbon Nano-Tubes", A. Verma, M.Z. Kauser, B.W. Lee, K.F. Brennan, and
P.P. Ruden, CP772, Physics of Semiconductors: 27th
International
Conference on the Physics of Semiconductors, J. Menendez and
C.G.
Van de Walle, eds., American Institute of Physics, p. 1049 (2005).
- "Effect
of wet etching on the magnetic properties
on n-type GaMnN
layers", Y. Liu, M.I. Nathan, P.P. Ruden, J.E. Van Nostrand, B.
Claflin, and J.D. Albrecht, CP772, Physics of Semiconductors:
27th
International Conference on the Physics of Semiconductors, J.
Menendez and C.G. Van de Walle, eds., American Institute of Physics, p.
359 (2005).
- "Electrical
and magnetic characteristics of MBE
grown GaMnN",
J.D. Albrecht, J.E. van Nostrand, B. Claflin, Y. Liu, M.I. Nathan, and
P.P. Ruden, Journal of Superconductivity: Incorporating Novel
Magnetism, 18, 69 (2005).
- "Hydrostatic
pressure dependence of charge carrier
transport in
single-crystal rubrene devices", Z. Rang, M.I. Nathan, P.P. Ruden, V.
Podzorov, M.E. Gershenson, C.R. Newman, and C.D. Frisbie, Appl.
Phys. Lett. 86, 123501 (2005).
Back to Top
- "Hydrostatic
pressure dependence of organic
thin-film transistor
current vs. voltage characteristics", Z. Rang, M.I. Nathan, P.P. Ruden,
R. Chesterfield, and C.D. Frisbie, Appl. Phys. Lett.,
85,
5760 (2004).
- "Pentacene
Organic Field-Effect Transistor on
metal substrates
with spin-coated smoothing layer", Y. Jin, Z. Rang, M.I. Nathan, P.P.
Ruden, C.R. Newman, and C.D. Frisbie, Appl. Phys. Lett.
85,
4406 (2004).
- "Model
for spin injection into conjugated organic
semiconductors", P.P. Ruden and D.L. Smith, G3.8, Mat. Res.
Soc.
Symp. Proc. (2004).
- "Theory
of spin injection into conjugated organic
semiconductors", P.P. Ruden and D.L. Smith, J. Appl. Phys.
95,
4898 (2004).
- "Effects
of hydrostatic and uniaxial stress on the
Schottky
barrier heights of Ga-polarity and N-polarity n-GaN", Y. Liu, M.Z.
Kauser, M.I. Nathan, P.P. Ruden, S. Dogan, H. Morkoc, S.S. Park, and
K.Y. Lee, Appl. Phys. Lett. 84,
2112 (2004).
Back to Top
Back to Top
- “Channel
formation in organic field effect transistors”, T. Li. J.W. Balk, P.P.
Ruden, I.H. Campbell, and D.L. Smith, J. Appl. Phys. 91, 4312 (2002).
- Invited paper: “Electronic structure of dynamically
two-dimensional hole gas in AlGaN/GaN heterostructures”, A. Sutandi,
P.P. Ruden, and K.F. Brennan, J.
Phys.: Condens. Matter 14,
3435 (2002).
- "Hole scattering near the
valence band edge in
wurtzite GaN",
J.D. Albrecht, P.P. Ruden, and T.L. Reinecke, J. Appl. Phys.
92,
3803 (2002).
- "Two-dimensional
modeling of organic field effect
transistors",
T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat. Res.
Soc.
Symp. Proc. 725, 137 (2002).
- "Effects
of hydrostatic and uniaxial stress on the
conductivity
of p-type GaN epitaxial layer", Y. Liu, M.Z. Kauser, M.I. Nathan, P.P.
Ruden, A.M. Dabiran, B. Hertog, and P.P. Chow, Appl. Phys.
Lett. 81, 3398 (2002).
- "Modeling
of channel formation in organic field
effect
transistors", T. Li, P.P. Ruden, I.H. Campbell, and D.L. Smith, Mat.
Res. Soc. Symp. Proc. 708, 237 (2002).
Back to Top
- “Uniaxial stress
dependence of Hall effect in an AlGaAs/GaAs modulation doped
heterostructure”, Y. Liu, Z. Rang, A.K. Fung, C. Cai, P.P. Ruden, M.I.
Nathan, and H. Shtrikman, Appl.
Phys. Lett., 79,
4586 (2001).
- “Theoretical study of direct-current and radio-frequency
breakdown in GaN wurtzite- and zincblende-phase MESFETs”, M. Farahmand,
M. Weber, L. Tirino, K.F. Brennan, and P.P. Ruden, J. Phys.: Condens. Matter,
13,
10477 (2001).
- “Hydrostatic pressure dependence of the photoconductivity
of single crystal pentacene and tetracene”, Z. Rang, A. Haraldson, D.M.
Kim, P.P. Ruden, and M.I. Nathan, Appl.
Phys. Lett. 79,
2731, 2001.
- Book chapter: “Simulation of carrier transport in wide band
gap semiconductors”, E. Bellotti, M.Farahmand, E. Goano, E. Ghillino,
C. Garetto, G. Ghione, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden,
“Topics in High Field Transport in Semiconductors”, K.F. Brennan and
P.P. Ruden eds., World Scientific Publishing, 2001. (Also appeared in Int. J. High Speed Electron.
Systems, Vol. 11,
525-584, 2001).
- “Monte Carlo modeling of wurtzite and 4H phase
semiconducting materials,” International
Workshop on Computational Electronics, Glasgow, Scotland,
May 2000; VLSI Design, Vol. 13,
p.p. 117-124 (2001).
- “Current Gain of an AlGaN/GaN Heterojunction Bipolar
Transistor”, Y. Zhang and P.P. Ruden, E9.14, Mat. Res. Soc. Proceedings,
Vol. 680E
(2001).
- “Hole Scattering in p-type Wurtzite Gallium Nitride”, J.D.
Albrecht and P.P. Ruden, E4.6, Mat.
Res. Soc. Proceedings, Vol. 680E (2001).
- “Stress effects in p-type AlGaN/GaN heterostructures”, A.
Sutandi, P.P. Ruden, and K.F. Brennan, E4.7, Mat. Res. Soc. Proceedings,
Vol. 680E
(2001).
- "Monte Carlo simulations of
electron transport in
III-Nitride
wurtzite phase materials system: binaries and ternaries", M. Farahmand,
C. Garetto, E. Bellotti, K.F. Brennan, M. Goano, E. Ghillino, G.
Ghione, J.D. Albrecht and P.P. Ruden, IEEE Trans. Electron
Devices 48, 535 (2001).
Back to Top
- “Monte Carlo
based calculation of transport parameters for wide band gap device
simulation,” E. Bellotti, M. Farahmand, H.-E. Nilsson, K.F. Brennan,
and P.P. Ruden, Mat.
Res. Soc. Symp. Vol. 622,
T6.24 (2000).
- “Design considerations for AlGaN/GaN heterojunction bipolar
transistor structures,” Y. Zhang, C. Cai, and P.P. Ruden, Mat. Res. Soc. Symp.
Vol. 622,
T6.25 (2000).
- “Thermal modeling of III-nitride heterostructure field
effect transistors,” T. Li, P.P. Ruden, J.D. Albrecht, M.G. Ancona, and
R. Anholt, Mat. Res.
Soc. Symp. Vol. 622,
T6.26 (2000).
- "AlGaN/GaN heterostructure
field-effect transistor
model
including thermal effects", J.D. Albrecht, P.P. Ruden, S.C. Binari, and
M.G. Ancona, IEEE Trans. Electron Devices 47,
2031
(2000).
- Invited
paper: "Monte Carlo simulation of
non-cubic symmetry
semiconducting materials and devices", K.F. Brennan, E. Bellotti, M.
Farahmand, H.-E. Nilsson, P.P. Ruden, and Y. Zhang IEEE
Trans.
Electron Devices 47, 1882 (2000).
- "Modeling
of Band-to-Band Tunneling Transitions
During Drift in
Monte Carlo Transport Simulations", P.P. Ruden, E. Bellotti, H.-E.
Nilsson, and K.F. Brennan, J. Appl. Phys. 88,
1488
(2000).
- "New
materials-theory-based model for output
characteristics of
AlGaN/GaN Heterostructure Field Effect Transistors", J.D. Albrecht,
P.P. Ruden, and M.G. Ancona, MRS Internet J. Nitride
Semicond. Res.,
F99W11.15 (2000).
- "AlGaN/GaN
heterojunction bipolar transistor
structures - design
considerations", Y. Zhang, C. Cai, and P.P. Ruden, J. Appl.
Phys. 88, 1067 (2000).
- “Monte Carlo
Calculation of Hole Initiated Impact Ionization in 4H Phase SiC” E.
Bellotti, H.-E. Nilsson, K.F. Brennan, P.P. Ruden, and R. Trew, J. Appl. Phys. 87, 3864, 2000.
- Book chapter: “Materials theory based modeling of GaN
devices,” K.F. Brennan, J. Kolnik, I.H. Oguzman, E. Bellotti, M.
Farahmand, P.P. Ruden, R. Wang, and J.D. Albrecht, Chapter 7 of “GaN
and related materials II,” Ed. S. J. Pearton, “Optoelectronic
Properties of Semiconductors and Superlattices,” Series ed. M.O.
Manasreh, Gordon and Breach Science Publishers, 2000.
- "Materials-theory-based
modeling of wide band gap
semiconductors:
from basic properties to devices", K.F. Brennan, E. Bellotti, M.
Farahmand, J. Haralson II, P.P. Ruden, J.D. Albrecht, and A. Sutandi, Solid-State
Electron. 44, 195 (2000).
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- "High
Field Electron Transport Properties of Bulk
ZnO", J.D.
Albrecht, P.P. Ruden, S. Limijumnong, W.R.L. Lambrecht, and K.F.
Brennan, J. Appl. Phys. 86,
6864 (1999).
- "1.3
micron Polarization Insensitive Optical
Amplifier Structure
Based on Coupled Quantum Wells", Y. Zhang and P.P. Ruden, IEEE
J.
Quantum Electron. QE-35, 1509 (1999).
- "Current-Voltage
Characteristics of Ungated
AlGaN/GaN
Heterostructures", J.D. Albrecht, P.P. Ruden, S.C. Binari, K.
Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske, and A.E.
Wickenden, Mat. Res. Soc. Symp. Proc. 572,
489 (1999).
- "Ensemble
Monte Carlo Calculation of Hole
Transport in 3C-SiC",
E. Bellotti, H.-E. Nilsson, K.F. Brennan, and P.P. Ruden, J.
Appl.
Phys. 85, 3211 (1999).
- "Extrinsic
Performance Limitations of AlGaN/GaN
Heterostructure
Field Effect Transistors", P.P. Ruden, J.D. Albrecht, A. Sutandi, S.C.
Binari, K. Ikossi-Anastasiou, M.G. Ancona, R.L. Henry, D.D. Koleske,
and A.E. Wickenden, MRS Internet Journal of Semicond. Res.
4S1
G6.35 (1999).
- "Monte
Carlo Simulation of Hall Effect in n-Type
GaN", J.D.
Albrecht, P.P. Ruden, and K.F. Brennan, MRS Internet Journal
of
Semicond. Res. 4S1, G6.6 (1999).
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- "Electron
Transport Characteristics of GaN for
High Temperature
Device Modeling", J.D. Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand,
and K.F. Brennan, J. Appl. Phys. 83,
4777 (1998).
- "Monte
Carlo study of electron initiated impact
ionization in
bulk zincblende and wurtzite phase ZnS", E. Bellotti, K. F. Brennan, R.
Wang, and P. P. Ruden, J. Appl. Phys. 83,
4765 (1998).
- "Monte
Carlo Calculation of High- and Low-Field
AlGaN Electron
Transport Characteristics", J.D. Albrecht, R.P. Wang, P.P. Ruden, M.
Farahmand, E. Belotti, and K.F. Brennan, Mat. Res. Soc. Symp.
Proc. 482, 815 (1998).
- "Monte
Carlo Calculation of Electron Transport in
Bulk AlN", J.D.
Albrecht, R.P. Wang, P.P. Ruden, M. Farahmand, and K.F. Brennan, J.
Appl. Phys. 83, 1446 (1998).
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- "Theory
of Hole Initiated Impact Ionization in
Bulk Zincblende
and Wurtzite GaN", I.H. Oguzman, E. Bellotti, K.F. Brennan, J. Kolnik,
R. Wang, and P.P. Ruden, J. Appl. Phys. 81,
7827 (1997).
- "Calculation
of the Electron Initiated Impact
Ionization
Transition Rate in Cubic and Hexagonal Phase ZnS", E. Bellotti, K.F.
Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 82,
2961 (1997).
- "Electronic
Structure Model for n-type and p-type
Silicon Quantum
Dots", T.-N. Fang and P.P. Ruden, Superlattices and
Microstructures 22, 589 (1997).
- "Ultraviolet-sensitive,
visible-blind GaN
photodiodes fabricated
by molecular beam epitaxy", J.M. Van Hove, R. Hickman, J.J. Klaassen,
P.P. Chow, and P.P. Ruden, Appl. Phys. Lett. 70,
2282
(1997).
- "Shallow
Impurity States in Wurtzite and
Zincblende Structure
GaN", R. Wang, P.P. Ruden, J. Kolnik, I.H. Oguzman, and K.F. Brennan, Mat.
Res. Soc. Symp. Proc. 445, 935 (1997).
- "Monte
Carlo Calculation of Electron Initiated
Impact Ionization
in Bulk Zincblende and Wurtzite GaN", J. Kolnik, I.H. Oguzman, K.F.
Brennan, R. Wang, and P.P. Ruden, J. Appl. Phys. 81,
726 (1997).
- "Dielectric
Properties of Wurtzite and Zincblende
Structure
Gallium Nitride", R. Wang, P.P. Ruden, J. Kolnik, I. Oguzman, and K.F.
Brennan, J. Phys. Chem. Sol. 58,
913 (1997).
- "Linear
In-Plane Uniaxial Stress Effects on the
Device
Characteristics of AlGaAs/GaAs Modulation Doped Field Effect
Transistors", A.K. Fung, L. Cong, J.D. Albrecht, M.I. Nathan, P.P.
Ruden, and H. Shtrikman, J. Appl. Phys. 81,
502 (1997).
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- "Theoretical
Prediction of Zincblende GaN
Avalanche Photodiode
Performance Based on Numerically Calculated Electron and Hole Impact
Ionization Ratio", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and
P.P. Ruden, Mat. Res. Soc. Symp. Proc. 423,
45 (1996).
- "Hole
Transport Properties of Bulk Zincblende and
Wurtzite Phases
of GaN Based on an Ensemble Monte Carlo Calculation Including a Full
Zone Band Structure", I.H. Oguzman, J. Kolnik, K.F. Brennan, R. Wang,
T.-N. Fang, and P.P. Ruden, J. Appl. Phys. 80,
4429
(1996).
- "Calculation
of the Wavevector Dependent Interband
Impact
Ionization Transition Rate in Wurtzite and Zincblende Phases of Bulk
GaN", J. Kolnik, I.H. Oguzman, K.F. Brennan, R. Wang, and P.P. Ruden, J.
Appl. Phys. 79, 8838 (1996).
- "Growth
of (111)b-Oriented Resonant Tunneling
Devices in a Gas
Source Molecular Beam Epitaxy System", L. Cong, J.D. Albrecht, D.
Cohen, P.P. Ruden, and M.I. Nathan, J. Vac. Sci. Technol. A
14,
924 (1996).
- "Resonant
Tunneling in (001)- and (111)-Oriented
III-V Double
Barrier Heterostructures Under Transverse and Longitudinal External
Stresses", J.D. Albrecht, L. Cong, M.I. Nathan, and P.P. Ruden, J.
Appl. Phys. 79, 7763 (1996).
- "Piezoelectric
Effects in (001)- and
(111)-Oriented Double
Barrier Resonant Tunneling Devices", L. Cong, J.D. Albrecht, P.P.
Ruden, M.I. Nathan, and D.L. Smith, J. Appl. Phys. 79,
7770 (1996).
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- "Independent
Control of Electron Density and
Spatial Electron
Distribution of Wire Gate Quantum Wire", R. Yang and P.P. Ruden, Proceedings
1995 International Semiconductor Device Research Symposium,
369
(1995).
- "Electron-Electron
Interaction Induced Instability
in Double
Quantum Wire Structures", R. Wang and P.P. Ruden, Phys. Rev. B
52,
7826 (1995).
- "Electron-Electron
Interaction in
Three-Dimensional Model Quantum
Box", R. Yang and P.P. Ruden, J. Appl. Phys. 78,
1798
(1995).
- "Electronic
Transport Studies of Bulk Zincblende
and Wurtzite
Phases of GaN Based on an Ensemble Monte-Carlo Calculation Including a
Full Zone Band Structure", J. Kolnik, I.H. Oguzman, K.F. Brennan, R.
Wang, P.P. Ruden, and Y. Wang, J. Appl. Phys. 78,
1033
(1995).
- "Coulomb
Effects Between Electrons in Quantum Box
Structure", R.
Yang, P.P. Ruden, and D.L. Smith, Phil. Mag. B 71,
359
(1995).
- "Piezoelectric
Effects in (001)-Oriented Double
Barrier Resonant
Tunneling Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden,
and D.L. Smith, Appl. Phys. Lett. 66,
1358 (1995).
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- "Piezoelectric
Effects in Double Barrier Resonant
Tunneling
Structures", L. Cong, J.D. Albrecht, M.I. Nathan, P.P. Ruden, and D.L.
Smith, Proceedings of the 22nd International Conference on
the
Physics of Semiconductors, L.D. Lockwood--editor, 1067, World
Scientific: Singapore (1994).
- "Optical
Properties of AlGaAs/GaAs n-i-p-i
Superlattices and
Their Application in Asymmetric Cavity Spatial Light Modulators", M.K.
Hibbs-Brenner, P.P. Ruden, J. Lehman, J.J. Liu, and R. Walterson, IEEE
J. Quantum Electron. 30, 1227 (1994).
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- "Self-Consistent
Calculation of the Structure of
Semiconductor
Quantum Wires: Semi-classical and Quantum Mechanical Approaches", Z. Wu
and P.P. Ruden, J. Appl. Phys. 74,
6234 (1993).
- "Self-Consistent
Calculation of the Electronic
Structure and
Inter-Wire Interaction of Split Gate Double Quantum Wires", Z. Wu, R.
Yang, and P.P. Ruden, Proceedings 1993 International
Semiconductor
Device Research Symposium 229 (1993).
- "Coulomb
Coupling Effects in Single Electron
Quantum Box
Structures", R. Yang, P.P. Ruden, and D.L. Smith, Proceedings
1993
International Semiconductor Device Research Symposium 329
(1993).
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- "Interband
Optical Transitions in Doping
Superlattices", J. Liu
and P.P. Ruden, Superlattices and Microstructures 12,
63 (1992).
- "Exchange
Effect in Coupled One-Dimensional
Electron Gas
Systems", Z. Wu and P.P. Ruden, J. Appl. Phys. 71,
1318
(1992).
- "Self-Consistent
Subband Calculations of Hetero
n-i-p-i
Superlattices and the Effects of Valence Subband Mixing", J. Liu and
P.P. Ruden, Superlattices and Microstructures 11,
415
(1992).
- "0.7
Micron Gate Length Complementary
Al(0.75)Ga(0.25)As/In(0.25)Ga(0.75)As/GaAs HIGFET Technology for High
Speed/Low Power Digital Circuits", D.E. Grider, P.P. Ruden, J.C.
Nohava, I.R. Mactaggart, J.J. Stronczer, and R.H. Tran, 1992
IEDM
Technical Digest 331 (1992).
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