Negative Thermal Expansion Thin Films
Our group has deposited a negative expansion then film based on zirconium tungstate ZrW2O8 and performed preliminary characterization of the deposited material. Since negative expansion behavior is rather rare, a large aspect of the project has been determine the underlying mechanism that leads to the behavior. In the case of bulk ZrW2O8 the negative expansion behavior is thought to be a result of transverse motions in metal-oxygen-metal bonds, which is made possible by the crystal structure of the material. However, unlike the bulk material, the thin films deposited showed no crystal structure even though they exhibited negative expansion. Further investigations led to a hypothesis that the driving mechanism of the negative expansion in the deposited films is related to the density of the film.

Figure 1 - Micro test structure used to measure the coefficient of thermal expansion. The curvature of the devices was monitored interferometrically as the temperature was varied.

Figure 2 - Curvature of microstructure versus temperature. Analyzed data leads to a coefficient of thermal expansion of -12 ppm/K.