Stephen A. Campbell
Professor
Presidential Young Investigator

B.A., 1975, Physics, College of St. Thomas
M.S., 1978, Physics, Northwestern University
Ph.D., 1978, Physics, Northwestern University

Telephone: (612) 625-5876

E-mail: campbell@ece.umn.edu
Web Page: http://www.ece.umn.edu/users/campbell/



My research interests include materials and fabrication processes required for very high speed silicon based structures. In one project our group is developing large diameter semi- insulating silicon substrates that will allow the design and fabrication of extremely competitive silicon microwave integrated circuits. This is done by introducing and suitably confined Fermi level pinning impurities in silicon wafers. We are very active in the area of dielectrics for deeply scaled MOSFETs. Working with industry collaborators we are developing optimal wet and dry cleaning processes for preoxidation surface preparation. With collaborators in Chemistry and Materials Science our group is investigating the use of MOCVD for the deposition of high permitivity materials for the gate insulator. With these materials we have built the world's first MOSFETs using high permitivity layers and have observed such interesting device effects as the quantum capacitance of the accumulation layer. Finally we have a very active and vigorous collaboration with the Mechanical Engineering Department in the detection of very small particles in the vacuum chambers of processing equipment. We are able to detect and size particles as small as 40 A in diameter and in densities approaching 10 cm^-3.


Selected Publications

S. A. Campbell, The Science and Technology of Microelectronic Fabrication, Oxford, 1996.

"A Critical Review - The Epitaxial Growth of Semiconductors By Rapid Thermal Chemical Vapor Deposition" accepted for publication, Materials Research Reviews.

"Particle Beam Mass Spectrometer Measurements of Particle Formation During LPCVD of Polysilicon and SiO2 Films", P. H. McMurry, S. Nijhawan, N. Rao, P. Ziemann, S. A. Campbell, and D. B. Kittleson, submitted to J. Vac. Sci. and Techn.

"Structural and Electrical Characterization of TiO2 Grown from Titanium Tetrakis-isopropoxide (TTIP) and TTIP/H2O Ambients", J. Yan, D. C. Gilmer, S. A. Campbell, and W. L. Gladfelter, accepted for publication, J. Vac. Sci. Techn. B

"Semi-Insulating Silicon", S. A. Campbell and J. Meyer, Proceedings of the 1995 Silicon on Insulator Workshop, IEEE (1995).