Ted K. Higman
Associate Professor

B.S. 1981, EE, Purdue University
M.S. 1982, EE, Purdue University
Ph.D., 1989, EE, University of Illinois

Telephone: (612) 624-4170
E-mail: higman@ece.umn.edu
Web Page: http://www.ece.umn.edu/users/higman/


My research interests are in the areas of the electron device fabrication, with a special emphasis on the use of scanning tunneling microscope (STM) as a lithographic tool, and high field transport in semiconductors, with recent emphasis on hot carrier injection into insulating layers and its effect upon the reliability of these insulators.


Selected Publications

Real-space Transfer by Hot Electron Resonant Tunneling, T. K. Higman, Jihong Chen, M. S. Hagedorn, F. Williamson, accepted August 1993, Superlattices and Microstructures.

Low Temperature Nitridation of Silicon by Direct Ammonia Nitridation in a Molecular Beam Epitaxy Reactor, T. K. Higman, R. T. Fayfield, M. S. Hagedorn, K. H. Lee, S. A. Campbell, J. N. Baillargeron, K. Y. Cheng, J. Vac. Sci. Tech. B11, 992(1993).

Scanning Tunneling Microscope Based Nanolithography for Electron Device Fabrication, (C Marrian, Ed.) J. Lyding, R. Brockenborough, P. Faye, J. Tucker, K. Hess, T. Higman, SPIE Publications.