Marshall I. Nathan
Professor
Centennial Chair holder

B.S., 1954, Physics, Massachusetts Institute of Technology
M.A., 1956, Physics, Harvard University
Ph.D., 1958, Applied Physics, Harvard University

Telephone: (612) 625-2319
Office Hours

E-mail: nathan@ece.umn.edu
Web Page: http://www.ece.umn.edu/users/nathan/

Member, National Academey of Engineering
Fellow, American Physical Society
Fellow, IEEE
1980 IEEE David Savnoff Award
1987 LEOS
IEEE Recognition for Semiconductor Laser



I am interested in high speed III-V semiconductor device physics. My research primarily consists of studying phenomena and measuring parameters related to high speed electronic and opto-electronic devices. The phenomena and parameters include: resonant and non-resonant tunneling, charge mobility and lifetime, impurity states, and trapping kinetics. My device work includes FETs, HBTs, lasers and photodetectors. Most of my current effort involves work on GaN and related large gap semiconductors.


Selected Publications

Stress Effects in AlGaN/GaN Modulation Doped Structures, A. Fung, M.I. Nathan, et al., MRS Symposium Proc.572, 495 (1999)

Ohmic Contacts to P-Type GaN, A. Fung, M.I. Nathan, et al., J. Appl. Phys., to be published

High Barrier Height GaN Schottky Diodes: Pt/GaN, Pd/GaN, L. Wang, M.I. Nathan, T-H. Lim, M.A. Khan, and Q Chen, Appl. Phys. Lett., in press 1996

Schottky Barriers Height Modification on n- and p- Type GaInP", T.J. Miller and M.I. Nathan, J. Appl. Phys. 76, 7931 (1994)

Doping Effects in Al/pSi/nGaAs Schottky Diodes, T.J. Miller and M.I. Nathan, J. Appl. Phys. 76, 371 (1994)