R. M. Warner, Jr.
Professor Emeritus

B.S., 1947, Physics, Carnegie Institute of Technology
M.S., 1950, Physics, Case Institute of Technology
Ph.D., 1952, Physics, Case Institute of Technology

Telephone: (612) 625-7811
E-mail: warner@ece.umn.edu


Fellow, IEEE


I have been involved in electronic device and circuit development for almost forty years, a period that includes a graduate school detour in nuclear physics. In these decades, I have worked in glass-dielectric capacitors (Corning Glass Works); point-contact, mesa, and intrinsic-barrier transistors and junction-field-effect diodes and tetrodes (Bell Labs); thyristors and JFETs (Motorola); MOS ICs (TI); bipolar ICs (ITT Semiconductors); JFETs (UC Semiconductors); lock-layer and channel-collector transistors and monolithic series-array solar batteries (University of Minnesota); and magnetic sensors (3M).

In the past ten years, I have worked with growing intensity on mono-crystalline 3-D ICs. I have also developed an increasing interest in the modeling of surfaces, diffused and step junctions, and devices using approximate analytic methods. These methods augment and complement the numerical methods, so popular today, by providing physical insights that cannot possibly be derived from numerical data.


Selected Publications

"Replacing the Depletion Approximation", with R. P. Jindal, Solid State Electronics, vol. 26, pp. 335-342, 1983.

Integrated Circuits: Design Principles and Fabrication, with J. N. Fordemwalt as Ed. New York: McGraw-Hill, 1965.

Transistors: Fundamentals for the Integrated-Circuit Engineer, with B. L. Grung, New York: John Wiley and Sons, 1983.

"Comparing MOS and Bipolar Integrated Circuits", IEEE Spectrum, vol. 4, pp. 50-58, June 1967.

"Diffused Junction Depletion-Layer Calculations", with H. Lawrence, The Bell System Technical Journal, vol. 39, pp. 389-404, March 1960.