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Woolley1999 Worleye Wright1998 B Wu19941C Wu19941D Wu199414 Wu199515 Wu199556 Wu19955E Wu19951z Wu19955 Wu19951 Wu19966F Wu19966H Wu19966I Wu19966 Wu1996G Wu19977J Wu19977 Wu1997d Wu1999a Wu2000sX Wu2001X Wu20011 Wu20020VWybourne2001kWybourne20011g Xia1997x Xia1998 Xia1999 Xia1999 Xia2001 Xia2001 Xia2001 Xiangfeng2002 Xiangfeng2003 Xiong2003 Xiu2000: Xu1998 Xu1998nM Xu20000 Xu20000 Xu2000oX Xu2001 Xu20040 Xu20040 Xu2004 Xue2000X Xue2001 Yager2001 Yamaguchi1999x Yamaguchi1999 Yamaguchi2001]Yamauchi20020Y Yan1997 Yan2004H Yang1995f Yang2001 Yang20011 Yang2004R Yankelevich1999S Yankelevich2000T Yankelevich2000d Yano2002X Yany2001 Yaralioglu2000 Yeatman1993 Yeatman1995 Yeatman2000J Yeh1994 Yeh1998 Yi1999 Yi2002n Yi2003 Yin2001Yokoyama19988Yokoyama1998Yokoyama20002 Yoneda1996 Yoon1999) Yoshida2000 Yoshida2001 Yoshimura2001 Yu20022 Yu20023 Yu2002m Yu2003nQ Zachariah2001P Zachariah2002q Zahn2001 Zami19989 Zasadzinski1994 Zavada1994eK Zeng20000 Zeng20011Y Zerkowski1994 Zhang1994 Zhang1994 Zhang1999 Zhang2000 Zhang2000K Zhang2000 Zhang2001g Zhao1997K Zhao20000 Zhaohui2003 Zhaohui2003 Zheng2003 Zhou2001k Zhu1998z Zhu1999 Zhu20009 Ziemann19956 Ziemann19967 Ziemann1997L Ziener2000 Ziener20010{Zoubtsow19999itesides2001r Whitesides2001> Whitesides2001̢ Whitesides2001 Whitesides2001 Whitesides2001 Whitesides2001 Whitesides2001 Whitesides2001" Whitesides2001# Whitesides2001N Whitesides2001g Whitesides2001= Whitesides2002̕ Whitesides2002̖ Whitesides2002 Whitesides2002 Whitesides2002 Whitesides2002 Whitesides2002 Whitesides2002 Whitesides2002d Whitesides2002 Whitesides2003 Whitesides2003 Whitesides2003 Whitesides2003  Whitesidest2002! 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Woolley1999 Wright1998 B Wu19941C Wu19941D Wu199414 Wu199515 Wu199556 Wu19955E Wu19951z Wu199551 Wu19966F Wu19966H Wu19966I Wu19966G Wu19977J Wu19977d Wu1999a Wu2000sX Wu2001X Wu20011 Wu20020 Wu20020VWybourne2001kWybourne20011g Xia1997x Xia1998 Xia1999 Xia2001 Xiangfeng2002 Xiangfeng2002 Xiangfeng2003 Xiangfeng2003 Xiu2000: Xu1998 Xu1998nM Xu20000 Xu20000 Xu2000o Xu20000X Xu2001 Xue2000X Xue2001 Yamaguchi1999x Yamaguchi1999 Yamaguchi2001]Yamauchi20020Y Yan1997H Yang1995f Yang2001 Yang20011R Yankelevich1999S Yankelevich2000T Yankelevich2000d Yano2002X Yany2001 Yaralioglu2000 Yeatman1993 Yeatman1995 Yeatman1995 Yeatman2000 Yeatman2000J Yeh1994 Yeh1998 Yi2002n Yi2002n Yi2003̲ Yi2003̮Yokoyama19988Yokoyama1998Yokoyama20002 Yoneda1996) Yoshida2000 Yu20022 Yu20022 Yu2002̴ Yu20023 Yu2002m Yu2003n Yu2003nQ Zachariah2001P Zachariah2002W Zachariah2002q Zahn2001 Zami19989 Zasadzinski1994 Zavada1994eK Zeng20000 Zeng20011Y Zerkowski1994 Zhang1994 Zhang1994 Zhang2000  Zhang2000K Zhang2000 Zhang2001g Zhao1997K Zhao20000 Zhaohui2003 Zhaohui2003 Zhaohui2003 Zhaohui2003 Zheng2003 Zhou2001k Zhu1998z Zhu1999 Zhu20009 Ziemann19956 Ziemann19967 Ziemann1997L Ziener2000 Ziener20010{Zoubtsow199992~;CJKhLPx#MVXl@Fa6<fm4Y\I`S+s^b%3>NTiW5t!cU&(:=v-0p)"$?}ey]*8zAqO{ |7gR,BDwGHZ1ndo[ AuthorsJournals ]D)Keywords                                ~   Abadal, G. Abbott, N. L. Abdala, P. Acklin, B. Adams, J. D.Adamson, D. H. Adderton, D.Adderton, D. M. Agarwal, R. Ahlfeldt, H.Aihara, Satoshi Akaba, R. Akcakir, O.Akcakir, Osman Akin, T. Alderman, J.Allenspach, RolfAlsnielsen, J.Alvarado, S. F. Alvis, R. Amaral, D. G. Amenitch, H.Ancona, Mario G.Anderson, D. J. Andersson, M. Andres, R. P.Andry, Paul A.Anselmetti, D. Aoki, S. Arai, F. Arias, F. Arnold, W. H.Arregui, Francisco J. Atalar, A. Atkins, W. M.Atwater, H. A.Atwater, Harry A.Austin, MichaelAustin, Robert H. Avni, Y. Bachtold, W. Baer, T. Bai, Y. B.Balaban, T. S.Baldwin, Kirk W. Ball, Philip Baltes, H. Bao, Zhenan Bard, A. J. Barnes, C. A.Barnes, Carol A. Barrett, J.Barrett, R. C. Barroso, A.Barroso-Chinea, P. Barry, C. R. Barry, Chad R Barry, N.Barry, Nicholas Bartz, M. Bass, R.Bassani, D. M.Battaglia, F. P. Baum, G. Baur, C. Baur, J. W.Bawendi, M. G.Baxter, P. N. W. Bayer, M. Beale, P. D. Beardmore, G. Bell, L. D.Bell, Lloyd D., IIBellermann, J. Bellew, C. L. Belomoin, G.Belomoin, Gennadiy Benyoseph, G. Benz, G. Berl, V. Bernard, A.Bernard, Andre Bernstein, R.Bernstorff, S. Berven, C. A. Besse, P. A. Best, M. E. Bethell, D.Beverly, K. C. Bezryadin, A.Bhandarkar, U.Bhandarkar, U. V.Biebuyck, H. A.Biebuyck, Hans Bietsch, A.Bietsch, Alexander Bingham, D. Binnig, G. Binnig, G. K. Birk, H. Birkelund, K. Black, A. J.Blackstone, S. Blakey, M. I. Boal, A. K.Boer, Elizabeth Boero, G.Bohanick, J. D.Bohnenkamp, C. A. Bohr, J.Bohringer Karl, F. Bohringer, K.Bohringer, K. F.Bohringer, Karl F. Bolan, K. Boncheva, M.Boncheva, Mila Born, A. Boser, B. E. Botti, S. Boulanger, R. Boulatov, R.Boumediene, N. Bowden, N. Bowden, N. B.Bowden, Ned B.Bradley, R. M. Brambley, B.Brandow, S. L. Brands, C. Braun, E. Breen, T. L.Breen, Tricia Lynn Breuning, E. Bright, V. M.Bright, Victor M.Briglin, ShawnBrinker, C. J.Brittain, Scott T. Bromann, K.Brongersma, Mark L. Brugger, J.Brumer, Yisroel Brune, H.Bruzewicz, Derek A. Buckman, L. Buerkle, A. Bugacov, A. Buot, F. A. Burger, F. Buzsaki, GBuzsaki, GyoergyCalvert, J. M.Campbell, Christopher J.Campbell, Dean J.Campbell, P. K.Campbell, P. M.Campbell, S. A.Campbell, Stephen A. Cao, Han Cao, Tingbing Cao, Y. W. Capasso, F. Carbeck, J. Carbin, J.Carlson, C. F.Carlsson, S. B.Carlsson, Sven-BertilCarpenter, E. E.Carrara, SandroCassagneau, ThierryCassagneau, Thierry P.Cassell, A. M. Ceyhan, B. Chai, W. P. Chai, X. D.Chaikin, P. M.Chandross, Edwin Chang, S.Changhasnain, C. J. Chapman, R.Chapman, Robert G.Charbonneau, S.Chattopadhyay, ArunChaudret, Bruno Chauzat, C. Chawla, M. K.Chediak, J. A.Cheetham, A. K. Chen, Erli Chen, F. Chen, J. P. Chen, Lei Chen, Linda Chen, S. G.Chen, Yaosheng Cheng, XingCheng, Xuanhong Cheon, JinwooCheran, Larisa-Emilia  q *Biotechnology: MT, methods*Electrodes, Implanted(%*Electrodes, Implanted: ST, standards*Electroencephalography,'*Electrophysiology: IS, instrumentation(%*Epilepsy, Temporal Lobe: SU, surgery(%*Hippocampus: AH, anatomy & histology *Hippocampus: ME, metabolism *Hippocampus: PH, physiology($*Image Processing, Computer-Assisted$*Maze Learning: PH, physiology *Memory*Memory: PH, physiology$*Microelectrodes: ST, standards *Neostriatum: PH, physiology*Nerve Regeneration*Neurons: PH, physiology *Orientation: PH, physiology*Psychosurgery$ *Pyramidal Cells: PH, physiology$*Reaction Time: PH, physiology *Reward *Silicon*Sleep: PH, physiology(%*Somatosensory Cortex: PH, physiology*Space Perception$!*Space Perception: PH, physiology *Theta Rhythm$*Visual Cortex: PH, physiology0 (Cytoskeletal Proteins)0 (Nerve Tissue Proteins)0 (RNA, Messenger) 110-ghz.2-dimensional arrays3-d microstructure.3-d optical wiring3-d-stack-oe-mcm Absorption.Acid melamine latticeAcid melamine lattice.Acid. acrylamide protein adsorption ActivationonrActuated micromirrors ActuationActuator arrays.s Actuators$Adamantanoid chelate complexesAdvancing frontDAaerosol semiconductor deposition floating gate nonvolatile memory@=aerosol silicon nanoparticle semiconductor device fabricationAerospace engineering.Afmvi AggregationniLGAI, Robotics, and Automatic Control in Current Contents(R)/Engineering, alignmentAlkanethiol monolayersatiAlkanethiolate monolayers Alkanethiolsy Alloys AluminiumAlzheimer's diseasendAlzheimers-disease.ndAmyloid-beta proteindAnalog fiberoptic linksand engineering.c anemometers Animals Aperture41app microparticle nanoparticle deposition carrier0-app mol cell binding temp responsive material$!Applied physics/condensed matter.HDApplied physics/condensed matter. Materials science and engineering.@=Applied Physics/Condensed Matter/Materials Science in CurrenttnApplied Physics/Condensed Matter/Materials Science in Current Contents(R)/Physical, Chemical & Earth Sciences. PhApplied Physics/Condensed Matter/Materials Science in Current Contents(R)/Physical, Chemical & Earth Sciences. Electrical & Electronics Engineering in Current Contents(R)/Engineering, Computing & Technology.Applied Physics/Condensed Matter/Materials Science in Current Contents(R)/Physical, Chemical & Earth Sciences. Metallurgy in Current Contents(R)/Engineering, Computing & Technology.Applied Physics/Condensed Matter/Materials Science in Current Contents(R)/Physical, Chemical & Earth Sciences. Optics & Acoustics in Current Contents(R)/Engineering, Computing & Technology.83Applied physics/condensed matter/materials science.HEApplied physics/condensed matter/materials science. Materials scienceLGApplied physics/condensed matter/materials science. Optics & acoustics. Architecturecarray Arraysirr Arrays.spArtificial atomsy85atom mol gradation ultracentrifuge acceleration fieldAtomic-force microscopecrAtomic-force microscopyY AttenuatorAutomatic Data Processing Bacteriochlorophyll c model@=Ball semiconductor integrated circuit microelectromech system Bandgapei BandwidthBar-code readerDAbeam splitter optical planar waveguide elec microcontact printing Beam steering BehavioriBehavior, Animal$ Behavior, Animal: PH, physiology Beta-peptidec Beta-peptides,&BGA packaging IC fluidic self assemblyBilayer-membranesBinary phase fresnel lensBinary-liquid alloys Binding oBinding propertiesons Binding.y Biochemistry & biophysics.Biocompatible Materials4.biol imaging silicon nanoparticle microcrystal |0"#Ic"DDw2PPxMVVVVl``%%!&(())*gg,D1o;YN-0pnK#6<<f+s>5t=$?}88zO{ w2LX@@@Fa\ISSSb3!!cUU&&:$yqRBGGHHZ1d`S3vR[;;CCCJJKh  Z|x30th International Symposium on Robotics. Celebrating the 30th Anniversary toward the Next Millennium. Japan Robot Assoctp8th International Conference on Solid State Sensors and Actuators and Eurosensors IX. Digest of Technical Papers Abstr. Pap. - Am. Chem. Soc.d_Abstracts of Papers, 222nd ACS National Meeting, Chicago, IL, United States, August 26-30, 2001hcAbstracts of Papers, 227th ACS National Meeting, Anaheim, CA, United States, March 28-April 1, 2004|xAbstracts, 35th Great Lakes Regional Meeting of the American Chemical Society, Chicago, IL, United States, May 31-June 2 Accounts of Chemical ResearchActa AstronauticaActa Physica Sinica Adv. Mater. Opt. Electron.7$Advanced Engineering Materials Advanced Functional MaterialsAdvanced MaterialsZ,&Advanced Materials (Weinheim, Germany)Advanced RoboticsAnalytical Chemistry,(Angewandte Chemie, International Edition,'Angewandte Chemie-International Edition4/Angewandte Chemie. International Ed. in English|yAnnual International Conference on Micro Electro Mechanical Systems, Proceedings, 13th, Miyazaki, Japan, Jan. 23-27, 2000("Annual Review of Materials Science85Annual review of medicine FIELD Publication Date:1997Appl. Phys. Lett.$ Applied Organometallic ChemistryApplied Physics a40Applied Physics a (Materials Science Processing)41Applied Physics A: Materials Science & Processing,(Applied Physics Letters Appl. Phys. LettApplied Surface ScienceIAstronomy & AstrophysicsAstrophysical Journal$Australian Journal of Chemistry Behavioural Brain ResearchBiophysical JournalXSBook of Abstracts, 219th ACS National Meeting, San Francisco, CA, March 26-30, 2000Chem. Soc. Rev.Chemical Communications(#Chemical Communications (Cambridge)83Chemical Communications (Cambridge, United Kingdom),(Chemical Educator [online computer file]Chemical Physics LettersChemistry & Biologyw Chemistry A European JournalChemistry of MaterialsO,)Chemistry-A European Journal Chem.-Eur. J Chimia CircuitreeCircuits AssemblyColloid & Polymer Science$Company WhitePaper, www.uic.com Computer4.Current Opinion in Colloid & Interface Science Denki Kagaku DVS Ber.$!Electrochemistry of Nanomaterials("Electronics Letters Electron. Lett Elektronik,(Elsevier. Microelectronics & Reliability("Elsevier. Microelectronics Journal,(Elsevier. Sensors & Actuators A Physical Elsevier. Synthetic Metals$Erekutoronikusu Jisso Gakkaishi European Biophysics Journal@;European Journal of Inorganic Chemistry Eur. J. Inorg. Chem<7European Journal of Organic Chemistry Eur. J. Org. Chem European Physical Journal DFaraday Discussions40Handbook of Surfaces and Interfaces of MaterialsHelvetica Chimica Acta(#High Temperature Material Processes0+Hippocampus FIELD Publication Date:1993 Jul,'Hippocampus FIELD Publication Date:1996(#http://www.boulder.nist.gov/div853/(%IBM Journal of Research & Development,'IBM Journal of Research and DevelopmentIcecs@:IEE Colloquium on Assembly and Connections in Microsystems IEE ReviewIEEE International Conference on Micro Electro Mechanical Systems, Technical Digest, 14th, Interlaken, Switzerland, Jan. 21-25, 2001(#IEEE J. Sel. Top. Quantum Electron.\YIEEE Journal of Selected Topics in Quantum Electronics IEEE J. Sel. Top. Quantum Electron40IEEE Journal on Selected Areas in CommunicationsD>IEEE Photonics Technology Letters IEEE Photonics Technol. Lett,'IEEE Transactions on Advanced PackagingPLIEEE transactions on bio-medical engineering FIELD Publication Date:1991 AugPLIEEE transactions on bio-medical engineering FIELD Publication Date:1994 AprTOIeee Transactions on Components and Packaging Technologies Ieee T Compon Pack T(%IEEE Transactions on Electron Devices82IEEE Transactions on Microwave Theory & Techniques0*IEEE. IEEE Journal of Solid State Circuits[2B;Mathias, J. P. Simanek, E. E. Seto, C. T. Whitesides, G. M.Design, preparation, and characterization of hydrogen bonded supramolecular aggregates based on the cyanuric acid melamine lattice 1994Macromolecular Symposia 77157-166b$Using Smart Source Parsing JanMolecular self-assembly is described as a strategy for synthesizing large hydrogen-bonded supramolecular aggregates that are based on the planar lattice formed of equimolar portions of cyanuric acid and melamine. The aggregates described in this paper contain four to ten individual molecules, are stabilized by networks of 18 to 54 hydrogen bonds, and have molecular weights in the range 2.7 to 6.5 kDa. Each of these aggregates has been characterized using H-1 NMR. spectroscopy, gel permeation chromatography, and vapor pressure osmometry. Physical-organic chemistry is used to (i) improve our criteria for the design of self-assembling structures and (ii) develop techniques for characterizing non-covalently bound aggregates in organic solution. [References: 9]SEs, D. I. Bethell, D. Schiffrin, D. J. Nichols, R. J.d^A nanometre-scale electronic switch consisting of a metal cluster and redox-addressable groups Nature 408l 6808 67-69i 2000 Nov 2.So-called bottom-up fabrication methods aim to assemble and integrate molecular componLEGirshick, S. L. Swihart, M. T. Suh, S. M. Mahajan, M. R. Nijhawan, S.i'@:Dept. of Mech. Eng., Minnesota Univ., Minneapolis, MN, USApjNumerical modeling of gas-phase nucleation and particle growth during chemical vapor deposition of silicon 2000,&Journal of the Electrochemical Society 14762303-11JDUsing Smart Source Parsing June pp. Publisher: Electrochem. Soc, USAhbA numerical model was developed to predict gas-phase nucleation of particles during silane pyrolysis. The model includes a detailed clustering mechanism for the formation of hydrogenated silicon clusters containing up to ten silicon atoms. This mechanism was coupled to an aerosol dynamics moment model to predict particle growth, coagulation, and transport. Both zero-dimensional transient simulations, at 1-2 atm pressure, and one-dimensional steady-state stagnation-point flow simulations, at 1-2 Torr pressure, were conducted. The effects of carrier gas, temperature, pressure, silane concentration, and flow rate were examined. The results predict that hydrogen as carrier gas, compared to helium, suppresses nucleation, and that particle formation for the case of hydrogen carrier gas increases strongly with increasing initial silane-to-hydrogen ratio. For the conditions examined, predicted particle nucleation rates increase dramatically with increasing temperature. The effect of total pressure depends on the pressure regime: at 1-2 atm pressure particle formation is predicted to be insensitive to pressure, whereas at 1-2 Torr particle formation is predicted to increase strongly with increasing pressure. The predicted effects on particle formation of temperature, pressure, carrier gas, and silane concentration are all qualitatively consistent with published experimental results. In the stagnation-point flow simulations the flow rate is found to affect particle dynamics because of the opposed effects of convective transport toward the heated water and thermophoretic transport away from the wafer. (40 References).Girshick, S. L. F?Plasma-assisted deposition of nanostructured films and coatingsD*#High Temperature Material Processes43379-384i 2000Recent work is reviewed on plasma-assisted deposition of nanostructured films and coatings. Several methods are being developed. These include conventional plasma spray in which nanostructure is induced in the coarse feed powder by mechanical milling before spraying; thermal plasma spray pyrolysis; plasma flash evaporation of fine powders injected into an RF torch; hypersonic plasma particle deposition; and low-pressure plasma synthesis and deposition of nanoparticles to produce thin films. [References: 19];:, N. Arias, F. Deng, T. Whitesides, G. M.whaSelf-assembly of microscale objects at a liquid/liquid interface through lateral capillary forcesLangmuir175 1757-1765p 2001 ^WBoal, A. K. Ilhan, F. DeRouchey, J. E. Thurn-Albrecht, T. Russell, T. P. Rotello, V. M.eVOSelf-assembly of nanoparticles into structured spherical and network aggregates Nature 404  6779746-748  2000 Apr 13@:Multi-scale ordering of materials is central for the application of molecular systems(1-3) in macroscopic devices(4,5). Self-assembly based on selective control of non-covalent interactions(6-8) provides a powerful tool for the creation of structured systems at a molecular level, and application of this methodology to macromolecular systems provides a means for extending such structures to macroscopic length scale(9-11). Monolayer-functionalized nanoparticles can be made with a wide variety of metallic and nonmetallic cores, providing a versatile building block for such approaches. Here we present a polymer-mediated 'bricks and mortar' strategy for the ordering of nanoparticles into structured assemblies. This methodology allows monolayer-protected gold particles to self-assemble into structured aggregates while thermally controlling their size and morphology. Using 2-nm gold particles as building blocks, we show that spherical aggregates of size 97 +/- 17 nm can be produced at 23 degrees C, and that 0.5-1 mu m spherical assemblies with (5-40) x 10(5) individual subunits form at -20 degrees C. Intriguingly, extended networks of similar to 50-nm subunits are formed at 10 degrees C, illustrating the potential of our approach for the formation of diverse structural motifs such as wires and rods. These findings demonstrate that the assembly process provides control over the resulting aggregates, while the modularity of the 'bricks and mortar' approach allows combinatorial control over the constituents, providing a versatile route to new materials systems. [References: 25]2+Bohringer, K. F. Srinivasan, U. Howe, R. T.e'@9Dept. of Electr. Eng., Washington Univ., Seattle, WA, USANHModeling of capillary forces and binding sites for fluidic self-assembly 2001Technical Digest. MEMS 01CH37090 369-74Using Smart Source Parsing 14th IEEE International Conference on Micro Electro Mechanical Systems (Cat. IEEE. 2001, pp. Piscataway, NJ, USAmRKMassively parallel self-assembly is emerging as an efficient, low-cost alternative to conventional pick-and-place assembly of microfabricated components. The fluidic self-assembly technique we have developed exploits hydrophobic-hydrophilic surface patterning and capillary forces of an adhesive liquid between binding sites to drive the assembly process. To achieve high alignment yield, the desired assembly configuration must be a (global) energy minimum, while other (local) energy minima corresponding to undesired configurations should be avoided. Thus, the design of an effective fluidic self-assembly system using this technique requires an understanding of the interfacial phenomena involved in capillary forces; improvement of its performance involves the global optimization of design parameters such as binding site shapes and surface chemistry. This paper presents a model and computational tools for the efficient analysis and simulation of fluidic self-assembly. The strong, close range attractive forces that govern our fluidic self-assembly technique are approximated by a purely geometric model, which allows the application of efficient algorithms to predict system behavior. Various binding site designs are analyzed, and the results are compared with experimental observations. For a given binding site design, the model predicts the outcome of the self assembly process by determining minimum energy configurations and detecting unwanted local minima, thus estimating expected yield. These results can be employed toward the design of more efficient self-assembly systems. (16 References).  Cherniavskaya, OksanaChetwynd, D. G. Cheung, P. W. Chi, L. Chiang, L. Chiaroni, D. Chideme, JohnChien, F. S. S. Chin, W. C.Chin-Li, Cheung Chiruvolu, S.Chmelka, B. F. Cho, A. Y. Choi, I. S. Choi, S. J. Choi, W. K. Chothia, C.Chou, Stephen Y. Chow, G. M.Chowdhury, Devasish Chui, B. W.Chumbes, E. M. Clark, T. D.Clark, Thomas D. Clarke, L.Claus, Richard O.Cleveland, J. P. Cohen, H. Cohen, S. Cohn, M. B.Cohn, Michael B.Coldren, C. W.Comtois, J. H. Conant, R. A.Connolly, C. I.Conroy, Richard S. Cooper, E. B.Cooper, Kristie L.Craig, Gordon S. W.Craston, D. H. Cross, G. Cui, Y. Cutrer, D. M.Czurko, AndrasDabrowski, M. J. Dagata, J. A.Dahlmann, G. W. Dai, H. Dai, H. J. Dai, Yong Dal Negro, L. Dan'ko, D. B. Daneman, M.Daneman, M. J. Davidov, D. Davis, R. M.De Blauwe, J. W. De Juan, L.de Rooij, N. F. Decian, A. Dehlinger, G.Delamarche, E.Delamarche, Emmanuel Deli, Wang Delsing, P. Deng, T. Dennis, B. S.Denton, Denice D. Deppert, K. Deppert, KnutDeRouchey, J. E. Deshpande, A. Deshpande, M. Despont, M. Deutch, J. M.Devoret, M. H.Dhaliwal, R. S. Di Fonzo, F. Diehl, L. Diener, C. Dietzel, M.Diluzio, Willow Dion, M. Dobisz, E. A.Dodabalapur, AnanthDoleman, Brett J. Dong, L.Donzel, Christian Doran, S. K.Dorgeuille, F. Dorn, H. C. Douglas, K.Dragoi, George Drain, C. M. Drake, A. Dravid, V. P. Drechsler, U.Dreeskornfeld, L. Du, Wei Wei Duffy, D. C.Duffy, David C.Dunn, Martin L.Dupontgervais, A. Durig, U.Durstock, M. F. Dutoit, M.Ebefors, Thorbjorn Eberl, K. Eckert, D. Eggs, C. Eichen, Y. Eichhofer, A. Eichinger, S. Eigler, D. M. Eisler, H. J.Ekstrom, A. D. El-Zein, N.Elghanian, Robert Elings, V. Emery, J. Y.Enichen, W. A. Enoksson, P. Ensslin, K. Erlacher, A.Erokhin, Victor et al. Fafard, S. Faist, J. Fan, H. Y. Fan, L. S. Fan, M. H. Fang, H.Fang, Jiandong Fang, Qian Farrow, R. C. Fatikow, S. Fau, PierreFearing, R. S. Fejfar, A.Feldheim, Daniel L.Fendler, J. H.Fendler, Janos H. Feng, Y. Fenske, D.Ferrigno, Rosaria Fischer, J. Fissan, H. Flagan, R. C.Flagan, Richard C.Flake, John C.Fleming, D. G.Foos, Edward E. Forchel, A. Ford, J. E. Foster, C. J.Francis, D. A. Franzo, G. Fraysse, J.Frechet, J. M. J.Frederick, N. A.Freidinger, Ellen R. Frenkel, A.Friedberger, A.Friedman, R. S. Fromm, K. Fromm, K. M.Fryer, Peter M. Fu, L. Fu, L. M.Fuerstman, Michael Fujimoto, K. Fujita, H.Fukano, Atsuyuki Fukuda, T. Fukushima, K. Fung, C. D. Furton, D. G. Gaillard, H.Gallatin, G. M. Gao, S. Garcia, A. M.Garimella, Viswanadham Garrido, L.Garstecki, Piotr Gates, B. Gates, ByronGates, Byron D. Geissler, M.Geissler, Matthias Xk Recognitionnc Redox couplesRefractive-index increase Reproducibility of Resultsresin resistors Resolutiontry$Resolution electron-microscopy Resolution.nn Restoration.<8review colloid crystn nanostructure assembly microdeviceHEreview data storage AFM cantilever array thermomech recording polymer@:review magnetic fluid nanoparticle application nanotechnol41review MEMS nanostructure carbon nanotube polymer review MEMS NEMS smart deviceD>review mesoscale millimeter scale microstructure self assembly4.review metal cluster single electron tunneling4/review metal nanocluster microelectronic device83review microassembly serial parallel micromachiningHEreview monodisperse spherical colloid complex structure self assemblyreview nanochem metal0+review nanocryst semiconductor nanoparticle4.review nanoparticle metal semiconductor device<9review nanoscale electronic photonic device self assembly0*review plasmonics nanoscale optical device0-review printing soft lithog stamp fabricationLHreview protein adsorption monolayer desorption surface modification MEMS0,review quantum dot semiconductor fabrication(#review science technol nanomaterial<7review self assembled monolayer biofunctional interface$review self assembly all scaleLHreview semiconductor film self assembly electron transfer charge storage,(review soft lithog microcontact printing review soft lithog printingreview supramol chem$RNA, Messenger: ME, metabolism robotsechRoom-temperaturey RotaxanesScaleScale componentsl Scale.eom Scannerrr$Scanning capacitance microscopy Scanning electron-microscopy82scanning Kelvin microprobe system surface analysisScanning micromirrorsscanning probe microscopy Scanning tunneling microscope$ Scanning tunneling potentiometry Scanning-tunneling-microscopyScavenger receptor.nd Sciences.84Sciences. Materials Science & Engineering in CurrenthLGSciences. Multidisciplinary in Current Contents(R)/Physical, Chemical &ci SecondarySecondary structureisSecreted isoforma0-selectively occupied repeated transfer (sort)LGself assembled aggregate IgGs template growth cluster gold nanoparticle<8self assembled bilayer mol coating magnetic nanoparticle Self assembly0*self assembly biomimetic electronic device83self assembly chain graphitized carbon nanoparticle83self assembly gold nanocluster semiconductor deviceD>self assembly gold silica nanosphere microstructure DNA linker self assembly MEMS multibatch self-aligned optical couplingself-aligned packagingSelf-alignmentSelf-assembled monolayers Self-assembled monolayers. Self-assemblySelf-assembly.ech Self-locking.Self-organization0*self-organizing lightwave network (solnet) Semiconductor84semiconductor device fabrication solder bump contact4.semiconductor device metal nanoparticle review84semiconductor device sensor spherical ball substrateD@semiconductor heterostructure cadmium sulfide nanoparticle prepn Semiconductor junction lasers Semiconductor laser arraysLFsemiconductor laser micromachined microoptics optoelectronic packagingSemiconductor lasers<9semiconductor quantum well silicon germanium nanoparticleSemiconductor-lasers Separationpar Sequences.yes Series.at Shape.sseSilf- Si(001)ndSige-($Signal Processing, Computer-AssistedLGsilica nanoparticle attachment AFM tip fluorocarbon film charge pattern Silicon tSilicon dioxiderr,&silicon iron silicide nanoparticle LED($silicon nanoparticle emission deviceLFsilicon nanoparticle heating inert gas light emitting receiving device83silicon nanoparticle nanocrystal dispersion polymer<6silicon nanostructure fabrication scanning probe oxidn,(silicon photodiode array gold tin soldersilicon-on-insulatorc Silicon.rL l7>6@4.Ziemann, P. J. Kittelson, D. B. McMurry, P. H.~Effects of particle shape and chemical composition on the electron impact charging properties of submicron inorganic particles 1996 Journal of Aerosol Science274r,&Using Smart Source Parsing Jun;:587 ff The electron impact charging properties of submicron (similar to 0.04-0.25 pm diameter) particles of inorganic salts, and metal and semiconductor oxides were investigated using a particle beam apparatus. The results indicate that the particle saturation charge is approximately a linear function of diameter, and is relatively insensitive to particle shape and chemical composition. A linear least-squares fit to all our data on inorganic and organic particles (14 different compounds) provides a simple equation that can be used to calculate saturation charge to within similar to 15% for these broad classes of materials. This result is important for the application of a new particle beam mass spectrometric technique we have developed for sizing submicron particles sampled from low-pressure environments. The saturation charging curves can be explained by using the results of a series of measurements on KCl particles to extend a charging model developed earlier for organic particles. Copyright (C) 1996 Elsevier Science Ltd. [References: 32]$Ziemann, P. J. McMurry, P. H..Spatial distribution of chemical components in aerosol particles as determined from secondary electron yield measurements - implications for mechanisms of multicomponent aerosol crystallization  1997,&Journal of Colloid & Interface Science 193t2 250-258n(!Using Smart Source Parsing Sep 15eSecondary electron yield measurements were used to determine the distribution of chemical components in multicomponent aerosol particles formed by crystallization from aqueous solution droplets, Yield measurements were made by measuring the charge acquired by a beam of particles as they passed through an electron beam (100-600 eV energy) inside a high-vacuum apparatus, Yields were sufficiently different for certain compounds that measurements made on two-component particles could be used to obtain information on tile spatial distribution of components. Variations in chemical composition as a function of depth beneath the particle surface were ascertained from the energy dependence of the measured fields, since the electron penetration depth, and therefore the probe depth, increases with electron energy. The results for mixed NaCl-NH4Cl particles indicate that the distribution of components within these particles is relatively homogeneous, while measurements made on mixed NaCl-NaNO3 particles are indicative of particles having a heterogeneous core-shell morphology. Results for mixed Na2SO4-(NH4)(2)SO4 particles are ambiguous, probably because of the complexity of the phase diagram of this system. It appears that the mechanism by which aerosol particles crystallize, and therefore the resulting distribution of chemical components within particles, is strongly dependent on particle composition and environmental Variables. (C) 1997 Academic Press. [References: 24]f 378HF-0009d]Ziener, U. Breuning, E. Lehn, J. M. Wegelius, E. Rissanen, K. Baum, G. Fenske, D. Vaughan, G.Recognition-directed supramolecular assemblies of metal complexes of terpyridine derived ligands with self-complementary hydrogen bonding sites "Chemistry-A European Journal6n22 4132-4139o 2000 Nov 17 Chem.-Eur. Jf_WILEY-V C H VERLAG GMBH, PO BOX 10 11 61, D-69451 BERLIN, GERMANY. URL: http://www.wiley-vch.deANHThe synthesis and X-ray structures of three metal complexes with terpyridine-derived ligands that contain amino-pyrimidine and amino-pyrazine moieties are presented. They have been designed in view of directing their self-assembly into specific supramolecular arrays through molecular recognition interactions. The solid-state structures indeed reveal extensive hydrogen-bonded networks. The Co complex 4a with PF6- counterions builds a two-dimensional infinite interwoven grid through strong double hydrogen bonds (d(N-H-N) =2.918-3.018 Angstrom) between the amino groups and the N atoms of the rings, with all H-bonding sites saturated. Changing the anions to BF4- in 46 leads to a similar infinite but partially broken grid with a quarter of the H-bonding sites unsaturated (d(N-H-N)=2.984-3.206 Angstrom). In the case of the Zn complex 12 with triflate anions, half of the hydrogen bonds are formed. Only one of the two orthogonal ligands has hydrogen bonds (d(N-H-N)=3.082, 3.096 Angstrom) to the neighbouring complexes and thus builds linear, supramolecular, polymeric chains. These structural differences are mainly attributed to crystal-packing effects caused by the different anions. The data presented here may also be regarded as a prototype for the generation of organised arrays through sequential self-assembly processes. [References: 28]Coordination chemistry Crystal engineering Hydrogen bonds Ligand design Supramolecular chemistry. Crystal-structure Coordination Series. Chemistry in Current Contents(R)/Physical, Chemical & Earth Sciences.'nhReprint available from: Lehn JM Univ Strasbourg 1, ISIS, Lab Chim Supramol 4 Rue Blaise Pascal F-67000 Strasbourg France Univ Strasbourg 1, ISIS, Lab Chim Supramol F-67000 Strasbourg France Univ Jyvaskyla, Dept Chem SF-40351 Jyvaskyla Finland Univ Karlsruhe, Inst Anorgan Chem D-76128 Karlsruhe Germany European Synchrotron Radiat Facil F-38043 Grenoble FranceD=Matsumoto, K. Gotoh, Y. Maeda, T. Dagata, J. A. Harris, J. S.rRoom-temperature single-electron memory made by pulse-mode atomic force microscopy nano oxidation process on atomically flat alpha-alumina substrateApplied Physics Letters762239-241 2000 Jan 10A single-electron memory was fabricated using the improved pulse-mode atomic force microscopy nano oxidation process which oxidized the surface of the thin titanium (Ti) metal on the atomically flat alpha-alumina (alpha-Al2O3) substrate and formed the narrow oxidized titanium (TiOx) line that works as a tunnel junction for the device. This single-electron memory consists of the multitunnel junction and a memory capacitance. The single-electron transistor, which works as an electrometer, was connected to the memory node of the single-electron memory to detect the potential change of the memory node by the injection of the individual electrons. The fabricated single-electron memory showed the hysteresis loop even at room temperature by the return trip of the memory bias when starting from 0 to 10 V and again coming back to 0 V. About 25 electrons were stored at the memory node. (C) 2000 American Institute of Physics. [S0003-6951(00)03102-8]. [References: 7]>7Mayer, F. Hintermann, M. Jacobs, H. Paul, O. Baltes, H.F|vWe report the fabrication, packaging, and characterization of thermoelectric CMOS anemometers. The sensors are fabricated using the commercial 2 mu m CMOS process of EM Microelectronic-Marin SA, Switzerland, followed by bulk silicon micromachining. They consist of a membrane of the CMOS dielectrics heated by integrated polysilicon resistors. Integrated p-polysilicon/n-polysilicon thermopiles detect wind-induced temperature differences on the membrane. Two devices are reported. The first, on a 1 mm by 1.3 mm die, measures one component of the wind velocity. The second structure, on a 2 mm by 2 mm die, measures the modulus and the direction of the air flow. We demonstrate packaging solutions for both sensors. They are mounted on a standard TO substrate, embedded in epoxy, and mechanically protected by a wire-mesh. The performance of the two-dimensional device is enhanced by a flow concentrator. The sensor responses were characterized in a wind tunnel as a function of sensor orientation, air velocity, and mesh parameters. The output signals grow monotonically with the air velocity up to 40 mV at 38 ms/sup -1/ (12 Beaufort) at a heating power of 3 mW. Angle detection is demonstrated with standard deviation smaller than 13 degrees . Cost-effective batch production and low power consumption make these thermal devices an interesting alternative to conventional mechanical anemometers&Thermoelectric CMOS anemometers 19965604564 SPIE-Int. Soc. Opt. EnghRKProceedings of the SPIE - The International Society for Optical EngineeringRKProceedings of the SPIE - The International Society for Optical Engineeringanemometers; CMOS integrated circuits; flow measurement; heating; membranes; micromachining; microsensors; packaging; resistors; thermopiles; velocity measurement; wind; wind tunnels 2882 0277-786X 236-46http://axiom.iop.org PSISDG" 236-46s(npBNeurosciences & Behavior in Current Contents(R)/Life Sciences. Nickell snon-programmaticNonbiological oligomersNoncovalent interactionsNoncovalent synthesis@7 nm show the configuration of cubic Co nanocrystals. Measurements of magnetization at 2-360 K reveal superparamagnetic behavior for the small nanoclusters up to 3 nm and ferromagnetism for clusters >7 nm.NGKlimenkov, M. Von Borany, J. Matz, W. Eckert, D. Wolf, M. Muller, K. H.81Applied Physics A: Materials Science & Processing77-1 FIELD Section Title:Magnetic Phenomena 75 Institute of Ion Beam Physics and Materials Research,Forschungszentrum Rossendorf e.V.,Dresden,Germany. FIELD URL: written in English.744571-575 2002LEstructure magnetism cobalt nanocluster ion beam synthesis silica film~wKlimov, V. I. Mikhailovsky, A. A. Xu, S. Malko, A. Hollingsworth, J. A. Leatherdale, C. A. Eisler, H. J. Bawendi, M. G.iF@Optical gain and stimulated emission in nanocrystal quantum dotsScienceg 290a 5490314-317g 2000 Oct 130*The development of optical gain in chemically synthesized semiconductor nanoparticles (nanocrystal quantum dots) has been intensely studied as the first step toward nanocrystal quantum dot Lasers, We examined the competing dynamical processes involved in optical amplification and Lasing in nanocrystal quantum dots and found that, despite a highly efficient intrinsic nonradiative Auger recombination, Large optical gain can be developed at the wavelength of the emitting transition for close-packed solids of these dots. Narrowband stimulated emission with a pronounced gain threshold at wavelengths tunable with the size of the nanocrystal was observed, as expected from quantum confinement effects. These results unambiguously demonstrate the feasibility of nanocrystal quantum dot lasers. [References: 23]&Kocka, J. Pelant, I. Fejfar, A.c.'Light emitting silicon, recent progressu 1996(!Journal of Non Crystalline Solidsi 200o Part 2857-862G$Using Smart Source Parsing MayRecent results concerning selected optical and mainly transport properties of light-emitting silicon are critically reviewed. A shea discussion is devoted to the question of the nature of the optical gap in porous silicon (direct/indirect). Special attention is given to the transport mechanism in strongly luminescent nanoporous silicon. It is concluded that the existence of tail states is crucial for the transport and a three-layer model of silicon nanoparticles is presented. Prospects for electroluminescent devices based on light-emitting silicon are evaluated from the point of view of their efficiency and stability. [References: 38] '. Jernigan, Glenn G. Ji, T. Jiang, J. Jiang, Liping Jiang, X. Y. Jiang, Xingyu Jiang, Y. S. Jin, Sungho Jog, M. S.Johnson, D. L. Jones, K. E. Joo, S. H. Jorritsma, J.Joselevich, E. Jourdan, A. Journet, C. Jun, Li Juncker, D.Juncker, David Junno, T. Junno, Tobias Kahn, J. M. Kajiyama, H. Kalbitzer, S. Kaler, E. W.Kallenbach, M. Kalvesten, E.Kalvesten, EdvardKamata, NorihikoKamholz, Andrew Evan Kamiyama, H.Kamounah, Fadhil S. Kan, Edwin C.Kanatake, Takashi Kane, Ravi S.Kanemitsu, Yoshihiko Karasan, E.Karg, Siegfried Kasica, R.Kasim, Ramesh K.Kasperovich, V.Kataoka, D. E. Kato, K. Kato, M. Kato, Tomoaki Katsap, V.Katsdemyanets, V.Katz, Howard E. Katz, R. H.Kavthekar, Vikram Kawata, S. Kawazoe, Y.Keating, Christine D. Keeppert, K. Keimel, ChrisKeller, Chris G. Kelly, G.Kendall, R. A. Kenny, T. W. Kern, K.Khargonekar, P. Khoury, R. G. Kiang, M. H.Kik, Pieter G. Kim, E. Kim, H. S. Kim, Hanchul Kim, J. M. Kim, P. Kim, T. Kim, Wondong Kimura, K. Kind, H. Kind, Hannes King, C. R. King, W. P. Kingon, A. I. Kipke, D. R.Kitamura, ShotaroKittelson, D. B. Kiyaev, O. E. Kjaer, K.Kladitis, Paul E.Kleineberg, U. Klimenkov, M. Klimov, V. I. Klumpp, B. Knapp, H. F. Knapp, H.F.Kneisel, B. O.Knickerbocker, Tanya Knoesen, A. Knoll, W. Knurek, C. S. Ko, W. H. Kobayashi, K.Koberstein, J. T.Kochanski, Gregory Peter Kocka, J.Koditschek, D. Koel, B. E. Kohn, B. Kojima, S. Kokura, S. Kolbas, R. M.Koloski, T. S. Komiak, J. J. Kong, J. Koo, Ja-YongKopanski, J. J.Korkusinski, M.Kortshagen, U.Kortshagen, U. R. Kosaka, Hideo Kotera, M.Kozhevnikov, A. A. Kramer, N. Kresin, V. V.Kriebel, JennahKriebel, Jennah K. Krinke, T. J.Krische, M. J.Krishnamoorthy, U.Kruppa, Walter Kubota, Y. Kuhle, A.Kumacheva, Eugenia Kumar, A. Kumbhar, A. Kurth, D. G. Kwak, J.Kyritsakas, N. Kyser, D. F. Laguna, M. A. Lahav, M. Lane, B. Last, M. Lau, K. L. Lau, K. Y. Lau, R. Y. Lavigne, B. Lawler, J. E.Leach-Scampavia, DeborahLeatherdale, C. A. Leckband, D. Ledoux, G. Lee, D. Lee, Geunseop Lee, H. C. Lee, H. M. Lee, J. N.Lee, Jessamine N.Lee, Jessamine Ng Lee, L. K. Lee, Luke P. Lee, S. S. Lee, Takhee Lee, Y. C. Lehn, J. M.Lehn, Jean-MarieLeibowitz, B. S.Leinekugel, XavierLeiserowitz, L. Leising, G. Leize, E. Lemon, R Leoni, R. E.Letsinger, R. L.Letsinger, Robert L.Leuchtmann, P.Lewis, Nathan S. Li, J. Li, J. L. Li, K. Li, K. B. Li, M. Li, Mingtao Li, T. J. Li, X. H. Li, Z. Q. Li, Z. Y. Li, ZhiLichtenwalner, D. J.Lichwalla, S. J. Liddle, J. A. Lieber, C. M.Lieberman, J. E. Liebowitz, B. Liepmann, D.Liepmann, Dorian Lin, C. C. Lin, G. W. Lin, J. Lin, L. Y.Cz(jRKConformal contact and pattern stability of stamps used for soft lithographyAn 2000:669359LEPatterning in soft lithog. techniques such as microcontact printing or light-coupling mask lithog. is mediated by surface topog. patterns of elastomeric stamps: intimate contact with the substrate is achieved locally at the protruding areas, whereas a gap remains between the substrate and recessed zones. This principle challenges the properties of the stamp, esp. when printing high-resoln. or extreme aspect-ratio patterns with high accuracy. On the one hand, the stamp must be soft enough to enable conformal contact with the substrate, which means that it must adapt elastically without leaving voids created by the natural roughness of the substrate. On the other hand, a precise definition of micropatterns requires a rigid material. In this article, we analyze the conditions of elasticity, roughness, and energy of adhesion to establish conformal contact between an elastomer and the target surface. Furthermore, we address questions of replication accuracy and evaluate local elastic deformation induced by normal forces using model calcns. for simple pattern geometries. Pressure applied during contact leads to a sagging or collapse of the unsupported areas. We discuss implications on both material and pattern design that allow spontaneous propagation of conformal contact while inhibiting the spreading of collapse. [on SciFinder (R)]& Bietsch, Alexander Michel, Bruno Journal of Applied PhysicstnFIELD Section Title: Zurich Research Laboratory,IBM Research,Rueschlikon,Switz. FIELD URL: written in English.887 4310-4318 2000VOElectrical testing of gold nanostructures by conducting atomic force microscopyAn 2000:387796b\The authors devised a method for the reliable elec. testing of nanoscale wire arrays using conducting probe at. force microscopy (AFM) in ambient conditions. A key requirement of this approach is the formation of highly reproducible elec. contacts between the conducting tip and the sample. The authors discuss the basic mech. and elec. criteria of nanocontacts and derive a force-controlled protocol for the formation of low-ohmic contacts. Tips sputter coated with platinum provided the mech. stability for both tapping-mode imaging and the formation of low-ohmic contacts on gold samples. Nanostructures on the sample were identified by topog. imaging and subsequently probed using the AFM tip as a mobile electrode. The authors measured resistivities in arrays of nanowires or local potentials of wires within elec. circuits, and detected elec. failures, thermal gradients, and small geometrical variations. The ability of this instrument to address elec. characteristics with high spatial resoln. makes it a powerful tool for lithog. developments and on-chip monitoring of nanoscale circuits. [on SciFinder (R)]PIBietsch, Alexander Schneider, M. Alexander Welland, Mark E. Michel, BrunoZTJournal of Vacuum Science & Technology, B: Microelectronics and Nanometer Structures76-2 FIELD Section Title:Electric Phenomena IBM Research, Zurich Research Laboratory,Rueschlikon,Switz. FIELD URL: written in English.183 1160-1170 2000<5gold nanostructure wire array atomic force microscopyLiquid crystal displayAn 2002:869385A liq. crystal display device is described comprising a substantially transparent substrate layer between a grating layer and a pixel electrode that comprises a solid conductor and an elec. conductive mesh, a liq. crystal layer between the pixel electrode and a substantially transparent counter electrode that is arranged at a transparent cover plate, and an active circuit element layer with a field effect transistor for controlling the pixel electrode. A method of fabricating the liq. crystal display device is also described wherein the pixel electrode is formed by printing a patterned substance onto the substrate layer and selectively plating a conductor onto the substance. The device may also comprise a conductor mesh comprising rows of conductor lines crossing with columns of conductor lines, wherein at least part of the conductor lines are randomly spaced from each other. [on SciFinder (R)]U.S. Pat. Appl. Publ. 27 pp. 2002&liq crystal display fabricationJCBietsch, Alexander Delamarche, Emmanuel Michel, Bruno Schmid, Heinz 4-(International Business Machines Corp., USA). Us 2002167619Can 137:360423 74-13 FIELD Section Title:Radiation Chemistry, Photochemistry, and Photographic and Other Reprographic Processes 75, 76 Field url: G02f001-13. 349001000. Application: US 20020513. 2002-63781 Ep 2001-810462 20010511 FIELD Citations:vpBinnig, G. Despont, M. Drechsler, U. Haberle, W. Lutwyche, M. Vettiger, P. Mamin, H. J. Chui, B. W. Kenny, T. W.RLUltrahigh-density atomic force microscopy data storage with erase capabilityApplied Physics Letterss749 1329-1331 1999 Mar 1n We report a simple atomic force microscopy-based concept for a hard disk-like data storage technology. Thermomechanical writing by heating a Si cantilever in contact with a spinning polycarbonate disk has already been reported. Here the medium has been replaced with a thin polymer layer on a Si substrate, resulting in significant improvements in storage density. With this new medium, we achieve bit sizes of 10-50 nm, leading to data densities of 500 Gbit/in.(2). We also demonstrate a novel high-speed and high-resolution thermal readback method, which uses the same Si cantilevers that are used in the writing process, and the capability to erase and rewrite data features repeatedly. (C) 1999 American Institute of Physics. [S0003-6951(99)00109-6]. [References: 19]zsBlack, A. J. Nealey, P. F. Thywissen, J. H. Deshpande, M. El-Zein, N. Maracas, G. N. Prentiss, M. Whitesides, G. M.nMicrofabrication of two layer structures of electrically isolated wires using self-assembly to guide the deposition of insulating organic polymer $Sensors & Actuators A-Physical86 1-2  96-102 2000 Oct 30The fabrication of two layer structures of electrically isolated wire - crossed wire structures and a surface coil inductor - is described. The fabrication process utilizes the tools of soft lithography and incorporates two levels of self-assembly. The use of microcontact printing and patterned self-assembly of liquid polymers removes the need for registration of the insulating layer with the underlying layer as required in conventional lithography techniques. The performance characteristics of the surface coil inductor are measured and closely resemble those predicted by theory. (C) 2000 Elsevier Science B.V. All rights reserved. [References: 19]-{j.'Brambley, B. Martin, B. Prewett, P. D.p 1994 Adv. Mater. Opt. Electron. 4832,Braun, E. Eichen, Y. Sivan, U. Benyoseph, G.RKDna-templated assembly and electrode attachment of a conducting silver wire 1998 Nature 391 6669775-778(!Using Smart Source Parsing Feb 19i.(Recent research in the field of nanometre-scale electronics has focused on two fundamental issues: the operating principles of small-scale devices, and schemes that lead to their realization and eventual integration into useful circuits, Experimental studies on molecular(1) to submicrometre(2) quantum dots and on the electrical transport in carbon nanotubes(3-5) have confirmed theoretical predictions(6-8) of an increasing role for charging effects as the device size diminishes. Nevertheless, the construction of nanometre-scale circuits from such devices remains problematic, largely owing to the difficulties of achieving inter-element wiring and electrical interfacing to macroscopic electrodes. The use of molecular recognition processes and the self-assembly of molecules into supramolecular structures(9,10) might help overcome these difficulties. In this context, DNA has the appropriate molecular-recognition(11) and mechanical(12-16) properties, but poor electrical characteristics prevent its direct use in electrical circuits. Here we describe a two-step procedure that may allow the application of DNA tc, the construction of functional circuits, In our scheme, hybridization of the DNA molecule with surface-bound oligonucleotides is first used to stretch it between two gold electrodes; the DNA molecule is then used as a template for the vectorial growth of a 12 mu m long, 100 nm wide conductive silver wire. The experiment confirms that the recognition capabilities of DNA can be exploited for the targeted attachment of functional wires. [References: 30]dDRKFaist, J. Capasso, F. Sivco, D. L. Sirtori, C. Hutchinson, A. L. Cho, A. Y.,Quantum cascade laserScience  264N 5158553-556  1994 Apr 22A semiconductor injection laser that differs in a fundamental way from diode lasers has been demonstrated. It is built out of quantum semiconductor structures that were grown by molecular beam epitaxy and designed by band structure engineering. Electrons streaming down a potential staircase sequentially emit photons at the steps. The steps consist of coupled quantum wells in which population inversion between discrete conduction band excited states is achieved by control of tunneling. A strong narrowing of the emission spectrum, above threshold, provides direct evidence of laser action at a wavelength of 4.2 micrometers with peak powers in excess of 8 milliwatts in pulsed operation. In quantum cascade lasers, the wavelength, entirely determined by quantum confinement, can be tailored from the mid-infrared to the submillimeter wave region in the same heterostructure material. [References: 29]RKFaist, J. Capasso, F. Sirtori, C. Sivco, D. L. Hutchinson, A. L. Cho, A. Y.F4.Laser action by tuning the oscillator strength Nature 387  6635777-782. 1997 Jun 19The threshold condition for laser action is usually achieved when the population difference between the initial and final energy levels of the laser transition reaches a critical value, determined by the equality between optical gain and losses. But the threshold condition can also be achieved by increasing the oscillator strength of the laser transition itself, while the population difference is held constant. This forms the basis of a new class of semiconductor lasers, a notable feature of which is broad wavelength tunability (on application of an electric field) in the technologically important mid-infrared region of the spectrum. [References: 24]lb\Marrian, C. R. K. Perkins, F. K. Park, D. Dobisz, E. A. Peckerar, M. C. Rhee, K. W. Bass, R.<5Modeling of electron elastic and inelastic scattering 1996.(Journal of Vacuum Science & Technology B146s 3864-3869t("Using Smart Source Parsing Nov-DecLEThe role of the form of the elastic and inelastic cross section in Monte Carlo simulations of electron-solid scattering has been studied to understand the processes whereby energy is deposited by electrons as they traverse thin films. Specifically we are interested in these phenomena as they relate to proximity effects in electron-beam lithography and the detection of electrons by a Schottky diode with a patterned absorber overlayer. Lithographic point and line spread functions have been measured in three resist materials. We show that the inclusion of discrete inelastic scattering events whereby fast secondaries are generated is essential for matching simulation and experiment. The secondaries are crucial in determining the shape of the spread functions in the 0.1-1 mu m regime and must be included to model proximity effects. Further, the fitting of line spread function simulations to experiment allows the accurate prediction of dot spread functions and applied dose thresholds as well as three dimensional resist profiles. The form of the elastic cross section is important in determining the energy loss in, and transmission through, thin metallic films. For electron energies where the film transmission is low, the Mott cross section provides a more accurate simulation than the screened Rutherford cross section. [References: 29]t$Marrian, C. R. K. Snow, E. S.:3Proximal probe lithography and surface modifications 1996"Microelectronic Engineering32 1-4173-189$Using Smart Source Parsing SepNGThe advantage of a low voltage approach to lithography and surface modification is that a more spatially localized energy deposition can be achieved than with a focused high energy charged particle beam. Proximal probes, such as the scanning tunnelling microscope or atomic force microscope with a conductive tip, are convenient ways to realize this approach. We summarize here research performed over the past few years at the Naval Research Laboratory directed towards materials studies and lithographic fabrication of structures and devices using proximal probes. [References: 52]5bRb[Surface wrinkling of two mutually attracting elastic thin films due to van der Waals forcesAn 2001:876479This article studies surface instability of two mutually attracting elastic films due to van der Waals forces under plane strain conditions. The anal. is based on an approx. method which reduces a two-dimensional problem of an elastic film to a 1-dimensional surface problem. This method is much simpler than the conventional method and allows one to easily identify the crit. value of the interaction coeff. and the surface instability mode. The accuracy of this method is demonstrated by the excellent agreement (with relative errors <5%) between the predicted results and the known exact data for a special case of an elastic film interacting with a rigid flat surface. The incompatibility of the individual fundamental modes of two elastic layers with unequal thickness results in two distinct metastable instability modes when the thickness ratio exceeds a crit. value, in contrast to the uniqueness of the surface instability mode of an elastic film attracted to a rigid flat surface. This nonuniqueness of the metastable instability modes would cause complex surface instability phenomena of two interacting elastic films (such as jump between the two instability modes). Ru, C. Q. Journal of Applied Physics66-5 FIELD Section Title:Surface Chemistry and Colloids Department of Mechanical Engineering,University of Alberta,Edmonton,AB,Can. FIELD URL: written in English.9012 6098-6104E 200181elastic film surface wrinkle van der Waals forcesi\VSurface instability of an elastic thin film interacting with a suspended elastic plateAn 2002:305439rkSurface instability is studied of a compliant elastic thin film on a rigid substrate interacting with a suspended elastic plate through van der Waals forces. The anal. is based on a novel method which permits a simple rational expression for the interaction coeff. as a function of the wave no. of instability mode. The crit. value of the interaction coeff. and the instability mode of the film-plate system can be detd. easily by identifying the min. of the interaction coeff. within an admissible range. When the stability strength of the plate is lower than the film even for the shortest plate-lengths, the interaction coeff. is an increasing function of the wave no., and thus the film-plate system exhibits a long-wave instability mode detd. by the suspended plate. In all other cases, the interaction coeff. admits an internal local min. representing the short-wave mode of the film, and the crit. value and instability mode of the film-plate system are detd. by the internal local min. for shorter plates, or by the long-wave mode of the plate for longer plates. Some numerical examples are given to illustrate the results. Ru, C. Q."Journal of Applied Mechanics48-11 FIELD Section Title:Unit Operations and Processes Department of Mechanical Engineering,University of Alberta,Edmonton,AB,Can. FIELD URL: written in English.692 97-103 2002~wfilm elastic thin plate interaction surface instability modeling; van Waals force elastic thin film surface instabilityi ZM723-0010F@Russell, K. C. Lehn, J. M. Kyritsakas, N. Decian, A. Fischer, J.Self-assembly of hydrogen-bonded supramolecular strands from complementary melamine and barbiturate components with chiral selection 1998New Journal of Chemistry222123-128$Using Smart Source Parsing Feb(!Mixtures of the triamino triazines 1-6 with the complementary barbiturate 7 result in molecular recognition directed self-assembly in solution and in the solid state. The cocrystallization of enantiomerically pure 1 or 2 with 7 leads to the formation of supramolecular strands, which have been characterized by crystal structure determination. When a racemic mixture of 1 and 2 is used, chiral selection occurs within strands; two homochiral strands crystallize in the unit cell, each containing a different triazine enantiomer. [References: 13]NHMolecular-recognition Architecture Complexes Secondary Tapes. Chemistry.'0)Reprint available from: Lehn JM UNIVERSITE LOUIS PASTEUR LAB CHIM SUPRAMOL CNRS URA 422 4 RUE BLAISE PASCAL F-67000 STRASBOURG FRANCE UNIVERSITE LOUIS PASTEUR LAB CHIM SUPRAMOL CNRS URA 422 F-67000 STRASBOURG FRANCE UNIVERSITE LOUIS PASTEUR CRISTALLOCHIM LAB CNRS URA 424 F-67000 STRASBOURG FRANCEF@Saado, Y. Ji, T. Golosovsky, M. Davidov, D. Avni, Y. Frenkel, A.d]Self-assembled heterostructures based on magnetic particles for photonic bandgap applicationsOptical Materialsd17 1-2  1-6  2001Jun-JulWe demonstrate self-assembly of magnetic particles floating on a liquid surface. The size of the particles can be in the millimeter to micron range. The in-plane ordering is due to magnetic repulsion between the particles in the confined region. The stability for mm-size particles is due to buoyancy forces and to the flat particle shape. 3D structures are prepared by a "layer-by-layer" technique. This allows the fabrication of 2D- and 3D-photonic bandgap (PBG) structures in the microwave range and hopefully in the infrared range. Computer simulations of the electromagnetic wave propagation at normal incidence for 3D structures containing up to six layers indicate existence of the stop-band. This is confirmed by preliminary microwave transmission experiments. The exact position of the stop band may be tuned by the external magnetic field through the change of the in-plane interparticle distance. We also report fabrication of functional microparticles such as polystyrene (PS) spheres containing magnetite and coated with gold nanoparticles. These microspheres will serve as building blocks for the tunable photonic crystals in the infrared, (C) 2001 Elsevier Science B,V. All rights reserved. [References: 18] nanometer range. In an exemplary embodiment, the nanoparticles of the stratum are substantially the same size and include cores which are cryst., preferably single cryst., and include a d. which is approx. the same as the bulk d. of the semiconductor material of which the particle cores are formed. In an exemplary embodiment, the cores and particles are preferably spherical in shape. The stratum was characterized by a uniform particle d. .apprx.1012 to 1013 particles/cm2. A plurality of adjacent particles contact each other, but the dielec. shells provide elec. isolation and prevent lateral conduction between the particles of the stratum. The stratum includes a d. of foreign atom contamination of less that 1011atoms/cm2. The stratum is advantageously used as the floating gate in a nonvolatile memory device such as a MOSFET. The nonvolatile memory device including the discontinuous floating gate of semiconductor nanoparticles exhibits excellent endurance behavior and long-term nonvolatility.PCT Int. Appl. 40 pp. 2002D=aerosol silicon nanoparticle semiconductor device fabricationb[Flagan, Richard C. Boer, Elizabeth Ostraat, Michele L. Atwater, Harry A. Bell, Lloyd D., II 0*(California Institute of Technology, USA). Wo0203472UCan 136:94556 76-3 FIELD Section Title:Electric Phenomena Field url: Ca, jp. At, be, ch, cy, de, dk, es, fi, fr, gb, gr, ie, it, lu, mc, nl, pt, se, tr. H01l029-788. Application: WO 20010629. 2001-us20827 Us 2000-215390 20000629 FIELD Citations:o^]v4-Oliver, S. R. J. Bowden, N. Whitesides, G. M.OF?Self-assembly of hexagonal rod arrays based on capillary forces,&Journal of Colloid & Interface Science 2242425-428 2000 Apr 15A series of well-ordered, extended mesostructures has been generated from hexagonal polyurethane rods (15 x 3.2 mm) by self-assembly using capillary forces. The surface of one or more sides of the rods was rendered hydrophilic by exposure to an oxygen plasma. This modification determined the pattern of hydrophobic and hydrophilic faces; the hydrophobic sides were coated with a thin film of a hydrophobic lubricant. Agitation of the rods in an approximately isodense aqueous environment resulted in their self-assembly, in a process reflecting the action of capillary forces, into an array whose structure depends on the pattern of hydrophobic sides; capillarity also aligned the ends of the rods. We also carried out experiments in reaction chambers that restricted the motion of the rods; this restriction served to increase the size and regularity Of the assemblies. (C) 2000 Academic Press. [References: 13]@:Oliver, S. R. J. Clark, T. D. Bowden, N. Whitesides, G. M.haThree-dimensional self-assembly of complex, millimeter-scale structures through capillary bonding.(Journal of the American Chemical Society 123o33 8119-8120 2001 Aug 22  Thurn-Albrecht, T.Thywissen, J. H. Tien, J. Tien, Joe Tien, N. C. Tikhonov, G. Tinkham, M. Tkach, R. W.Tok, Jeffery B. H.Tomchuk, P. M.Toshiyoshi, H.Tosteson, Magdalena T. Trager, F. Tran, E. Tremel, W.Tressler, E. V.Trimble, A. R.Trindade, Tito Troian, S. M. Tsubaki, K. Tsukada, M. Tsukamoto, K. Tu, J. K. Tully, D. C. Turner, K. L. Twigg, M. Tymiak, N. Uda, T. Ulman, A.Urbach, Adam R.Van Dorsselaer, A.Vandorsselaer, A. Vang, T. A.Varadan, Vijay K. Varnell, G.Vassilovski, D. Vaughan, G. Velev, O. D.Velev, Orlin D. Ventikos, Y. Vettig