Polarization field engineering as a powerful technique in novel opto/electronic device development

Prof. F. Shadi Shahedipour-Sandvik
State University of New York-Albany

Abstract:
Wide bandgap semiconductors based of III-Nitrides and SiC are posed to continue and replace traditional Si based devices in many applications including in products requiring high power and high frequency.  In this talk I will present a series of novel technologies that exploit the exceptional properties of III-Nitrides.  The presentation is structured into two parts. The focus of the first section will be applications of nanostructures as reliable, high gain single photon detectors.  We have recently shown sustainable avalanche behavior in AlGaN based APDs, as well as reported the first Cs-free GaN based photocathode.   Next, I will present our recent advances in developing high power devices such as transistors and Schottky diodes with reduced off-state leakage current and high breakdown voltage.  I will conclude by further discussing the potential of III-nitride semiconductors as an important piece in the future of energy efficiency, and its impact on applications in biology. 

Bio:
F. Shadi Shahedipour-Sandvik is an Associate Professor in the Engineering Constellation at the State University of New York-College of Nanoscale Science and Engineering.  After leading the construction of a new university laboratory for the study of III-Nitride semiconductor, Dr. Sandvik initiated a number of federally, State, and industry funded projects. Her research focuses on development of novel opto/electronic devices based on wide bandgap III-Nitrides for applications in detection, emission and power electronics. Her research program has continuously been funded by Federal and NY State funding agencies, industry, and National Labs. From 1998 to 2001, she held a Postdoctoral fellowship in the MSE and EECS departments at Northwestern University.  There, she was the first to report a fully packaged GaN-based photocathode detector for solar-blind applications.  She received a Ph.D. in Experimental Solid-State Physics from University of Missouri-Columbia after receiving a B.Sc. in Physics from University of Tehran, Iran in 1993.  Dr. Sandvik has authored and co-authors over 100 publications and has given a number of invited talks at international conferences.  Dr. Sandvik was appointed the first “Presidential Fellow” in 2013, a “Provost Fellow” in 2012, and was awarded “NY Governor’s 2005 Woman of Excellence Award” for her professional accomplishment.  Dr. Sandvik was recently named the Editor-in-Chief of the Journal of Electronic Materials.