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All talks will be held in Van Vleck Lecture Hall (Tate 150).
To download your electronic copy of the NVMTS 2013 program, please click on the link below. Once you click it, a zip file containing the program will begin downloading on your computer.
→ NVMTS 2013 Program Download Link
| Time (CT) | Talk | Speaker | Affiliation | Country | |
|---|---|---|---|---|---|
| 8:20 AM | Welcome and Opening Speech | Jian-Ping Wang | Univ. of Minnesota | USA | |
| A-1 | 8:30 AM | Keynote: "Emerging Memory Technology Landscape" | Gurtej Sandhu | Micron | USA |
| Session 1 - FLASH | |||||
| A-2 | 9:10 AM | "Recent Progress and Future Directions in NAND Flash Scaling" | Akira Goda | Micron | USA |
| Session 2 - MRAM 1 | |||||
| A-3 | 9:35 AM | "Challenges and Opportunities of Magnetoresistive Based Memory and Logic and their Integration" | Jian-Ping Wang | Univ. of Minnesota | USA |
| A-4 | 10:00 AM | "Robust Low-Power Multi-Terminal STT-MRAM" | Kaushik Roy | Purdue Univ. | USA |
| 10:25 AM | Coffee Break (Tate Atrium) | ||||
| Session 3 - MRAM 2 | |||||
| A-5 | 10:45 AM | "MRAM: Magneto-Resistive Random Access Memory" | Ramni Katti | Honeywell | USA |
| A-6 | 11:10 AM | "High Speed and Low Current STT-MRAM for Normally-Off Computing" | Naoharu Shimomura | Toshiba | Japan |
| A-7 | 11:35 AM | "Thermally Assisted Switching STT MRAM" | Jean-Pierre Nozieres | SPINTEC, CEA/CNRS/UJF | France |
| A-8 | 12:00 PM | "Selector Devices for Emerging Memory Architectures" | An Chen | GLOBALFOUNDRIES | USA |
| 12:25 PM | Lunch (McNamara) | ||||
| Session 4 - RRAM 1 | |||||
| B-1 | 1:30 PM | "Investigation of Resistive Memories (RRAM) Potentialities - Switching Phenomena and Retention Performances" | Gabriel Molas | Advanced Memory Technology | France |
| B-2 | 1:55 PM | "New Insights into Redox Based Resistive Switches" | Stephan Tappertzhofen | Aachen - Institute of Solid State Research | Germany |
| B-3 | 2:20 PM | "AlOx/WOx Bilayer Resistive Random Access Memory" | Huaqiang Wu | Tsinghua Univ. | China |
| B-4 | 2:55 PM | "Mechanism of Localized Electrical Conduction at the Onset of Electroforming in TiO2 Based Resistive Switching Devices" | James Bain | Carnegie Mellon Univ. | USA |
| B-5 | 3:20 PM | "SiOx Resistive Memory Device: Invisible Memory and 1D-1R 1 kbit Integration Application" | James M. Tour (Gunuk Wang) | Rice Univ. | USA |
| 3:45 PM | Coffee Break (Tate Atrium) | ||||
| Session 5: FeRAM | |||||
| B-6 | 4:05 PM | "Resistive Switching Memory Effect in a BiFeO3 Ferroelectric Diode" | Akihito Sawa | AIST | Japan |
| B-7 | 4:30 PM | "Ferroelectric Memories Based on Resistive Switching" | Alexei Gruverman | Univ. of Nebraska-Lincoln | USA |
| B-8 | 4:55 PM | "Ferroelectric Memories" | Edwin Chihchuan Kan | Cornell Univ. | USA |
| B-9 | 5:20 PM | "A Dual-Channel Ferroelectric-Gate Field-Effect Transistor" | Yukihiro Kaneko | Panasonic | Japan |
| 6:00 PM | Poster Session & Social Hour | ||||
| 7:30 PM | Dinner | ||||
| Time (CT) | Talk | Speaker | Affiliation | Country | |
|---|---|---|---|---|---|
| C-1 | 8:30 AM | Keynote: "Evolution of PRAM Application with Challenging Technologies" | Hongsik Jeong | Samsung | South Korea |
| Session 6 - PCRAM | |||||
| C-2 | 9:10 AM | "Manipulating Material Interfaces for Low current PCRAM" | Rong Zhao | Singapore Univ. of Technology and Design | Singapore |
| C-3 | 9:35 AM | "Chalcogenide Memristors for Neuromorphic Computing" | Xiangshui Miao | Hongzhong Univ. of Science and Technology | China |
| C-4 | 10:00 AM | "DFT Simulations of the Crystallization of the Phase-Change Material Ge2Sb2Te5 : Insights on Nucleation and Percolation" | Jaakko Akola | Tampere Univ. of Technology | Finland |
| 10:25 AM | Coffee Break (Tate Atrium) | ||||
| Session 7 - ReRAM 2 | |||||
| C-5 | 10:45 AM | "Heat Dissipation Mechanisms in Resistive Switching Devices" | Eilam Yalon | Technion | Isreal |
| C-6 | 11:10 AM | "CMOS-Compatible Nanometallic RRAM Devices" | I-Wei Chen | Univ. of Pennsylvania | USA |
| C-7 | 11:35 AM | "Resistive Switching Behavior in Two-Dimensional Highly Crystalline Layered Dielectric" | Bin Yu | State Univ. of New York | USA |
| C-8 | 12:00 PM | "Resistive Switching in Organic Memory Devices for Extended Flexible Applications" | Ru Huang | Peking University | China |
| 12:25 PM | Lunch (Mississippi Room) | ||||
| 12:25 PM | Committee Meeting and Lunch | ||||
| Session 8 - Simulation and New Concepts Memory | |||||
| D-1 | 1:30 PM | "Simulation and Benchmarking of Spintronic Memory and Logic" | Dmitri Nikonov | Intel | USA |
| D-2 | 1:55 PM | "Towards a Nonvolatile VLSI Processor Using MTJ/MOS-Hybrid Logic-in-Memory Architecture" | Takahiro Hanyu | Tohoku Univ. | Japan |
| D-3 | 2:20 PM | "Recent Development of Artificial Cognitive Memory" | Luping Shi | Tsinghua Univ. | China |
| D-4 | 2:55 PM | "Title: TBA" | Xiufeng Han | IOP, CAS | China |
| D-5 | 3:20 PM | "Magnetic Ratchet for 3-Dimensional Memory and Logic" | Dorothée Petit | Univ. of Cambridge | UK |
| D-6 | 3:45 PM | "Ti-Sb-Te material ensuring faster phase change speed for PCRAM" | Zhitang Song | Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences | China |
| 4:10-6:00 PM | Poster Session (Poster Award Judgment and Decision Making; McNamara) | ||||
| 6:00 - 7:30 PM | Bus to Dinner Venue and Social Hour | ||||
| 7:30 - 9:30 PM | Banquet | ||||
| 9:30 PM | Bus Back to Hotel | ||||
| Time (CT) | Talk | Speaker | Affiliation | Country | |
|---|---|---|---|---|---|
| E-1 | 8:30 AM | Keynote: "Emerging Nonvolatile Memories from an Enterprise System Company Perspective" | William (Bill) Gallagher | IBM | USA |
| Session 9 - MRAM 2 | |||||
| E-2 | 9:10 AM | "Voltage Controlled Spintronics for Nonvolatile Nanoelectronics" | Kang Wang | UCLA | USA |
| E-3 | 9:35 AM | "Voltage Induced Unipolar Switching in Magnetic Tunnel Junctions with Tunable Energy Barrier" | Wei-Gang Wang | Univ. of Arizona | USA |
| E-4 | 10:00 AM | "Voltage-controlled Exchange Bias for ultra-low power MRAM Applications" | Christian Binek | Univ. of Nebraska, Lincoln | USA |
| 10:25 AM | Coffee Break (Tate Atrium) | ||||
| Session 10 - Memory in Logic | |||||
| E-5 | 10:45 AM | "Reconfigurable Spin Switch for Digital/Analog Computing" | Behtash Behin-Aein | GLOBALFOUNDRIES | USA |
| E-6 | 11:10 AM | "Title: TBA" | Tetsuo Endoh | Tohoku Univ. | Japan |
| E-7 | 11:35 AM | "Neuromorphic Computing with Memristive Circuits" | Dmitri Strukov | Univ. of California, Santa Barbara | USA |
| E-8 | 12:00 PM | "Mn-Based Magnetic Alloys and Magnetic Tunnel Junctions for STT-MRAM Applications" | Shigemi Mizukami | Tohoku Univ. | Japan |
| 12:25 PM | Lunch (Rapson) | ||||
| Session 11 - MRAM 3 | |||||
| F-1 | 1:30 PM | "Study on Electrical and Magnetic Performances of Thin Film Cr2O3/Fe2O3 Sesquioxide with ME Effect" | Masashi Sahashi | Tohoku Univ. | Japan |
| F-2 | 1:55 PM | "Orthogonal Spin Transfer Torque MRAM" | Andrew Kent | New York Univ. | USA |
| F-3 | 2:20 PM | "Non-Volatile Spin Logic" | Alex Shukh | Spingate Technology | USA |
| F-4 | 2:55 PM | "Title: TBA" | Pete Eames | NVE Technology | USA |
| F-5 | 3:20 PM | "Embedded STT-MRAM: Tailoring Attributes for Mobile Systems" | Seung H. Kang | Qualcomm Technologies | USA |
| F-6 | 3:45 PM | "Processing of Perpendicular MTJ Stack for STtRAM Applications" | Mahendra Pakala | Applied Materials | USA |
| 4:10 PM | Award Presentation | ||||
| 4:20 PM | Closing Remarks | Jian-Ping Wang and Luping Shi | |||
| End of Conference | |||||